Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPL60R140CFD7AUMA1

IPL60R140CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies
568 -

RFQ

IPL60R140CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Bulk - Active - - - 18A (Tc) - - - - - - - - - -
IPB70N10SL16ATMA1

IPB70N10SL16ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies
2,955 -

RFQ

IPB70N10SL16ATMA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540NSTRRPBF

IRF540NSTRRPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
1,460 -

RFQ

IRF540NSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R190E6XKSA1

IPA65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies
3,468 -

RFQ

IPA65R190E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R190C6XKSA1

IPP65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220-3

Infineon Technologies
476 -

RFQ

IPP65R190C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R190C6XKSA1

IPI65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO262-3

Infineon Technologies
2,065 -

RFQ

IPI65R190C6XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF1405ZS-7P

AUIRF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,255 -

RFQ

AUIRF1405ZS-7P

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA11N60CFDXKSA1

SPA11N60CFDXKSA1

MOSFET N-CH 600V 11A TO220-3

Infineon Technologies
2,069 -

RFQ

SPA11N60CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 1.9mA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB100N08S2L07ATMA1

IPB100N08S2L07ATMA1

MOSFET N-CH 75V 100A TO263-3

Infineon Technologies
6,674 -

RFQ

IPB100N08S2L07ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 80A, 10V 2V @ 250µA 246 nC @ 10 V ±20V 5400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R500C3XKSA2

IPA90R500C3XKSA2

MOSFET N-CH 900V 11A TO220

Infineon Technologies
2,578 -

RFQ

IPA90R500C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS8407-7TRL

AUIRFS8407-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,683 -

RFQ

AUIRFS8407-7TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI90R500C3XKSA2

IPI90R500C3XKSA2

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies
2,359 -

RFQ

IPI90R500C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R165CPAKSA1

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

Infineon Technologies
2,010 -

RFQ

IPI60R165CPAKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS3306TRL

AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,482 -

RFQ

AUIRFS3306TRL

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1405ZS-7TRL

AUIRF1405ZS-7TRL

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,658 -

RFQ

AUIRF1405ZS-7TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB026N10NF2SATMA1

IPB026N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,841 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPB65R150CFDATMA2

IPB65R150CFDATMA2

MOSFET N-CH 650V 22.4A TO263-3

Infineon Technologies
2,232 -

RFQ

IPB65R150CFDATMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP11N60S5XKSA1

SPP11N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,482 -

RFQ

SPP11N60S5XKSA1

Ficha técnica

Tube * Not For New Designs - - - - - - - - - - - - - -
IPP120N08S404AKSA1

IPP120N08S404AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
2,505 -

RFQ

IPP120N08S404AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPF017N08NF2SATMA1

IPF017N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
2,078 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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