Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3006-7P

AUIRFS3006-7P

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
2,949 -

RFQ

AUIRFS3006-7P

Ficha técnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB100N04S303ATMA1

IPB100N04S303ATMA1

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
2,185 -

RFQ

IPB100N04S303ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.5mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB160N04S3H2ATMA1

IPB160N04S3H2ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
3,104 -

RFQ

IPB160N04S3H2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.1mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180N04S4LH0ATMA1

IPB180N04S4LH0ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,710 -

RFQ

IPB180N04S4LH0ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1mOhm @ 100A, 10V 2.2V @ 180µA 310 nC @ 10 V +20V, -16V 24440 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3307TRLPBF

IRFS3307TRLPBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,797 -

RFQ

IRFS3307TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPF023N08NF2SATMA1

IPF023N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
2,226 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPI60R190C6XKSA1

IPI60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO262-3

Infineon Technologies
3,206 -

RFQ

IPI60R190C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R190E6XKSA1

IPA60R190E6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

Infineon Technologies
3,154 -

RFQ

IPA60R190E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF3710ZSTRL

AUIRF3710ZSTRL

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
3,707 -

RFQ

AUIRF3710ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPTG018N08NM5ATMA1

IPTG018N08NM5ATMA1

TRENCH 40<-<100V PG-HSOG-8

Infineon Technologies
3,074 -

RFQ

IPTG018N08NM5ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 253A (Tc) 6V, 10V 1.8mOhm @ 150A, 10V 3.8V @ 159µA 127 nC @ 10 V ±20V 9200 pF @ 40 V - 3.8W (Ta), 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL3705ZSTRL

AUIRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,246 -

RFQ

AUIRL3705ZSTRL

Ficha técnica

Tape & Reel (TR) - Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB160N04S203ATMA4

IPB160N04S203ATMA4

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
2,507 -

RFQ

IPB160N04S203ATMA4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.9mOhm @ 60A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB013NE2LXIXUMA1

BSB013NE2LXIXUMA1

MOSFET N-CH 25V 36A/163A 2WDSON

Infineon Technologies
19,409 -

RFQ

BSB013NE2LXIXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 163A (Tc) 4.5V, 10V 1.3mOhm @ 30A, 10V 2V @ 250µA 62 nC @ 10 V ±20V 4400 pF @ 12 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB180P04P403ATMA1

IPB180P04P403ATMA1

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
2,614 -

RFQ

IPB180P04P403ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 410µA 250 nC @ 10 V ±20V 17640 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4710PBF

IRFP4710PBF

MOSFET N-CH 100V 72A TO247AC

Infineon Technologies
3,551 -

RFQ

IRFP4710PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies
2,591 -

RFQ

IPB180N03S4LH0ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 200µA 300 nC @ 10 V ±16V 23000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA210N10S5N024AUMA1

IAUA210N10S5N024AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
2,668 -

RFQ

IAUA210N10S5N024AUMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Tj) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 150µA 119 nC @ 10 V ±20V 8696 pF @ 50 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3004-7P

AUIRFS3004-7P

MOSFET N-CH 40V 240A D2PAK-7

Infineon Technologies
3,017 -

RFQ

AUIRFS3004-7P

Ficha técnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI120N06S402AKSA2

IPI120N06S402AKSA2

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
500 -

RFQ

IPI120N06S402AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS3107-7P

AUIRFS3107-7P

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies
3,553 -

RFQ

AUIRFS3107-7P

Ficha técnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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