Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB019N08NF2SATMA1

IPB019N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies
2,190 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,045 -

RFQ

IRFSL7430PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies
2,670 -

RFQ

IPB039N10N3GE8187ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC218N04N3X7SA1

IPC218N04N3X7SA1

MV POWER MOS

Infineon Technologies
2,361 -

RFQ

IPC218N04N3X7SA1

Ficha técnica

Bulk * Not For New Designs - - - - - - - - - - - - - -
IRF150DM115XTMA1

IRF150DM115XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies
2,983 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V - - - - - - - - - - -
IPB65R190CFDATMA2

IPB65R190CFDATMA2

MOSFET N-CH 650V 17.5A TO263-3

Infineon Technologies
3,242 -

RFQ

IPB65R190CFDATMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL2910STRRPBF

IRL2910STRRPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies
2,902 -

RFQ

IRL2910STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) - 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V - 3700 pF @ 25 V - - - Surface Mount
IPA60R299CPXKSA1

IPA60R299CPXKSA1

MOSFET N-CH 600V 11A TO220-FP

Infineon Technologies
2,965 -

RFQ

IPA60R299CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6641TRPBF

IRF6641TRPBF

MOSFET N-CH 200V 4.6A DIRECTFET

Infineon Technologies
4,800 -

RFQ

IRF6641TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V 4.9V @ 150µA 48 nC @ 10 V ±20V 2290 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB65R230CFD7AATMA1

IPB65R230CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies
3,181 -

RFQ

IPB65R230CFD7AATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

Infineon Technologies
2,738 -

RFQ

IPI076N12N3GAKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB50R199CPATMA1

IPB50R199CPATMA1

MOSFET N-CH 550V 17A TO263-3

Infineon Technologies
3,230 -

RFQ

IPB50R199CPATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUA180N10S5N029AUMA1

IAUA180N10S5N029AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
3,580 -

RFQ

IAUA180N10S5N029AUMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tj) 6V, 10V 2.9mOhm @ 90A, 10V 3.8V @ 130µA 105 nC @ 10 V ±20V 7673 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R199CPAATMA1

IPB60R199CPAATMA1

MOSFET N-CH 600V 16A D2PAK

Infineon Technologies
2,292 -

RFQ

IPB60R199CPAATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB120N08S404ATMA1

IPB120N08S404ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies
2,780 -

RFQ

IPB120N08S404ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL65R210CFDAUMA1

IPL65R210CFDAUMA1

MOSFET N-CH 650V 16.6A 4VSON

Infineon Technologies
3,015 -

RFQ

IPL65R210CFDAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16.6A (Tc) 10V 210mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R210CFDAUMA2

IPL65R210CFDAUMA2

MOSFET N-CH 650V 16.6A 4VSON

Infineon Technologies
2,518 -

RFQ

IPL65R210CFDAUMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16.6A (Tc) 10V 210mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB120N10S405ATMA1

IPB120N10S405ATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
3,543 -

RFQ

IPB120N10S405ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 100A, 10V 3.5V @ 120µA 91 nC @ 10 V ±20V 6540 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP120N10S405AKSA1

IPP120N10S405AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies
2,188 -

RFQ

IPP120N10S405AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.3mOhm @ 100A, 10V 3.5V @ 120µA 91 nC @ 10 V ±20V 6540 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S208AKSA2

IPP80N06S208AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
15,329 -

RFQ

IPP80N06S208AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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