Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPTG025N10NM5ATMA1

IPTG025N10NM5ATMA1

TRENCH >=100V PG-HSOG-8

Infineon Technologies
2,146 -

RFQ

IPTG025N10NM5ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 206A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 158µA 120 nC @ 10 V ±20V 8800 pF @ 50 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6619

IRF6619

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
13,869 -

RFQ

IRF6619

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6619TR1

IRF6619TR1

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
7,164 -

RFQ

IRF6619TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6619TR1PBF

IRF6619TR1PBF

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
2,000 -

RFQ

IRF6619TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IWM013N06NM5XUMA1

IWM013N06NM5XUMA1

TRENCH 40<-<100V

Infineon Technologies
2,363 -

RFQ

IWM013N06NM5XUMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRL60B216

IRL60B216

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,061 -

RFQ

IRL60B216

Ficha técnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 250µA 258 nC @ 4.5 V ±20V 15570 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N04S303AKSA1

IPP100N04S303AKSA1

MOSFET N-CH 40V 100A TO220-3

Infineon Technologies
500 -

RFQ

IPP100N04S303AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R145CFD7XKSA1

IPA60R145CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
428 -

RFQ

IPA60R145CFD7XKSA1

Ficha técnica

Bulk,Tube - Active - - - 9A (Tc) - - - - - - - - - -
IPF024N10NF2SATMA1

IPF024N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,431 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
SPB100N03S203T

SPB100N03S203T

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
4,457 -

RFQ

SPB100N03S203T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9520NPBF

IRF9520NPBF

MOSFET P-CH 100V 6.8A TO220AB

Infineon Technologies
8,628 -

RFQ

IRF9520NPBF

Ficha técnica

Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) - 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V - 350 pF @ 25 V - - - Through Hole
AUIRFS8407TRL

AUIRFS8407TRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,221 -

RFQ

AUIRFS8407TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N08S207AKSA1

IPP80N08S207AKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
1,000 -

RFQ

IPP80N08S207AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies
2,805 -

RFQ

IPL65R165CFDAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R165CFDAUMA2

IPL65R165CFDAUMA2

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies
3,444 -

RFQ

IPL65R165CFDAUMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP100N08S207AKSA1

IPP100N08S207AKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies
22,200 -

RFQ

IPP100N08S207AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S2L05AKSA2

IPP100N06S2L05AKSA2

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
340 -

RFQ

IPP100N06S2L05AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB0401NM5SATMA1

IPB0401NM5SATMA1

TRENCH >=100V

Infineon Technologies
3,926 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPP013N04NF2SAKMA1

IPP013N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
3,592 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPP027N08N5AKSA1

IPP027N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
8,256 -

RFQ

IPP027N08N5AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.8V @ 154µA 123 nC @ 10 V ±20V 8970 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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