Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7455TRPBF

IRF7455TRPBF

MOSFET N-CH 30V 15A 8SO

Infineon Technologies
3,831 -

RFQ

IRF7455TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.8V, 10V 7.5mOhm @ 15A, 10V 2V @ 250µA 56 nC @ 5 V ±12V 3480 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI120N04S401AKSA1

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies
2,934 -

RFQ

IPI120N04S401AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R420CFDFKSA1

IPW65R420CFDFKSA1

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies
3,440 -

RFQ

IPW65R420CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R420CFDFKSA2

IPW65R420CFDFKSA2

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies
2,398 -

RFQ

IPW65R420CFDFKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL60R180P6AUMA1

IPL60R180P6AUMA1

MOSFET N-CH 600V 22.4A 4VSON

Infineon Technologies
2,793 -

RFQ

IPL60R180P6AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB80N06S2H5ATMA2

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
289 -

RFQ

IPB80N06S2H5ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPTG025N08NM5ATMA1

IPTG025N08NM5ATMA1

TRENCH 40<-<100V PG-HSOG-8

Infineon Technologies
2,727 -

RFQ

IPTG025N08NM5ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 184A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6500 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4110GPBF

IRFB4110GPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
3,461 -

RFQ

IRFB4110GPBF

Ficha técnica

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL60S216

IRL60S216

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,721 -

RFQ

IRL60S216

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R160P6ATMA1

IPB60R160P6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies
3,287 -

RFQ

IPB60R160P6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

MOSFET N-CHANNEL_30/40V

Infineon Technologies
2,472 -

RFQ

IPB80N04S2H4ATMA2

Ficha técnica

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
IPP015N04NF2SAKMA1

IPP015N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
2,501 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPP05CN10NGXKSA1

IPP05CN10NGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
2,628 -

RFQ

IPP05CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 181 nC @ 10 V ±20V 12000 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUT165N08S5N029ATMA1

IAUT165N08S5N029ATMA1

MOSFET N-CH 80V 165A 8HSOF

Infineon Technologies
3,669 -

RFQ

IAUT165N08S5N029ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™-5 Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI3306GPBF

IRFI3306GPBF

MOSFET N-CH 60V 71A TO220

Infineon Technologies
16,305 -

RFQ

IRFI3306GPBF

Ficha técnica

Bulk,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 10V 4.2mOhm @ 43A, 10V 4V @ 150µA 135 nC @ 10 V ±20V 4685 pF @ 50 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI320N20N3GAKSA1

IPI320N20N3GAKSA1

MOSFET N-CH 200V 34A TO262-3

Infineon Technologies
3,104 -

RFQ

IPI320N20N3GAKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC105N10LSFGATMA1

BSC105N10LSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

Infineon Technologies
3,597 -

RFQ

BSC105N10LSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 11.4A (Ta), 90A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2.4V @ 110µA 53 nC @ 10 V ±20V 3900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB100N04S204ATMA4

IPB100N04S204ATMA4

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
3,000 -

RFQ

IPB100N04S204ATMA4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S204ATMA2

IPB80N04S204ATMA2

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
15,492 -

RFQ

IPB80N04S204ATMA2

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1010ZSTRL

AUIRF1010ZSTRL

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,681 -

RFQ

AUIRF1010ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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