Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR5305

AUIRFR5305

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
2,777 -

RFQ

AUIRFR5305

Ficha técnica

Bulk,Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT65R125CFD7XTMA1

IPT65R125CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies
2,768 -

RFQ

Tape & Reel (TR) - Active - - 650 V - - - - - - - - - - Surface Mount
AUIRF7737L2TR

AUIRF7737L2TR

MOSFET N-CH 40V 31A DIRECTFET

Infineon Technologies
2,530 -

RFQ

AUIRF7737L2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 156A (Tc) 10V 1.9mOhm @ 94A, 10V 4V @ 150µA 134 nC @ 10 V ±20V 5469 pF @ 25 V - 3.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB240N03S4LR9ATMA1

IPB240N03S4LR9ATMA1

MOSFET N-CH 30V 240A TO263-7

Infineon Technologies
18,850 -

RFQ

IPB240N03S4LR9ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 240A (Tc) 4.5V, 10V 0.92mOhm @ 100A, 10V 2.2V @ 180µA 300 nC @ 10 V ±16V 20300 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

MOSFET N-CH 650V 17.5A D2PAK

Infineon Technologies
2,210 -

RFQ

IPB65R190CFDAATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB65R145CFD7AATMA1

IPB65R145CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies
3,162 -

RFQ

IPB65R145CFD7AATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB180N10S403ATMA1

IPB180N10S403ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
3,778 -

RFQ

IPB180N10S403ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3.3mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540NLPBF

IRF540NLPBF

MOSFET N-CH 100V 33A TO262

Infineon Technologies
2,606 -

RFQ

IRF540NLPBF

Ficha técnica

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2405PBF

IRFU2405PBF

MOSFET N-CH 55V 56A IPAK

Infineon Technologies
14,064 -

RFQ

IRFU2405PBF

Ficha técnica

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 56A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPF014N08NF2SATMA1

IPF014N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
2,287 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AUIRF2804L

AUIRF2804L

MOSFET N-CH 40V 195A TO262

Infineon Technologies
2,050 -

RFQ

AUIRF2804L

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4228PBF

IRFS4228PBF

MOSFET N-CH 150V 83A D2PAK

Infineon Technologies
2,716 -

RFQ

IRFS4228PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
SPI21N50C3XKSA1

SPI21N50C3XKSA1

MOSFET N-CH 560V 21A TO262-3

Infineon Technologies
3,002 -

RFQ

SPI21N50C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF2804STRL7P

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,648 -

RFQ

AUIRF2804STRL7P

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408-7TRL

AUIRFS8408-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,449 -

RFQ

AUIRFS8408-7TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R125C7ATMA2

IPB65R125C7ATMA2

MOSFET N-CH 650V 18A TO263-3

Infineon Technologies
2,299 -

RFQ

IPB65R125C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1324WL

AUIRF1324WL

MOSFET N-CH 24V 240A TO262-3

Infineon Technologies
2,440 -

RFQ

AUIRF1324WL

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) 10V 1.3mOhm @ 195A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 7630 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA15N60CFDXKSA1

SPA15N60CFDXKSA1

MOSFET N-CH 650V 13.4A TO220-FP

Infineon Technologies
2,366 -

RFQ

SPA15N60CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N60CFDXKSA1

SPP15N60CFDXKSA1

LOW POWER_LEGACY

Infineon Technologies
2,876 -

RFQ

SPP15N60CFDXKSA1

Ficha técnica

Tube * Not For New Designs - - - - - - - - - - - - - -
IPP024N06N3GXKSA1

IPP024N06N3GXKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
400 -

RFQ

IPP024N06N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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