Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB80N04S403JEATMA1

IPB80N04S403JEATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies
2,768 -

RFQ

Bulk OptiMOS®-T2 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IRFH5302DTRPBF

IRFH5302DTRPBF

MOSFET N-CH 30V 29A/100A PQFN

Infineon Technologies
2,855 -

RFQ

IRFH5302DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.35V @ 100µA 55 nC @ 10 V ±20V 3635 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA023N04NM3SXKSA1

IPA023N04NM3SXKSA1

TRENCH <= 40V

Infineon Technologies
2,517 -

RFQ

Tube - Active - - - - - - - - - - - - - -
BSC014N06LS5ATMA1

BSC014N06LS5ATMA1

MOSFET 60V TDSON-8-7

Infineon Technologies
2,019 -

RFQ

Tape & Reel (TR) OptiMOS™, StrongIRFET™ Active - MOSFET (Metal Oxide) 60 V - - - - - - - - - - Surface Mount
IGT40R070D1E8220ATMA1

IGT40R070D1E8220ATMA1

MOSFET N-CH 400V 31A HSOF-8-3

Infineon Technologies
2,547 -

RFQ

IGT40R070D1E8220ATMA1

Ficha técnica

Tape & Reel (TR) CoolGaN™ Obsolete N-Channel MOSFET (Metal Oxide) 400 V 31A (Tc) - - 1.6V @ 2.6mA - ±10V 382 pF @ 320 V - 125W (Tc) 0°C ~ 150°C (TJ) Surface Mount
IAUA220N08S5N021AUMA1

IAUA220N08S5N021AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
3,358 -

RFQ

IAUA220N08S5N021AUMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 220A (Tj) 6V, 10V 2.1mOhm @ 100A, 10V 3.8V @ 120µA 105 nC @ 10 V ±20V 7219 pF @ 40 V - 211W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R299CPAUMA1

IPL60R299CPAUMA1

MOSFET N-CH 650V 11.1A 4VSON

Infineon Technologies
47,646 -

RFQ

IPL60R299CPAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 22 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP120N04S402AKSA1

IPP120N04S402AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies
2,797 -

RFQ

IPP120N04S402AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI032N06N3GAKSA1

IPI032N06N3GAKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
900 -

RFQ

IPI032N06N3GAKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R280C6XKSA1

IPA65R280C6XKSA1

MOSFET N-CH 650V 13.8A TO220

Infineon Technologies
3,137 -

RFQ

IPA65R280C6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB009N03LGATMA1

IPB009N03LGATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies
2,352 -

RFQ

IPB009N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 250µA 227 nC @ 10 V ±20V 25000 pF @ 15 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA040N08NM5SXKSA1

IPA040N08NM5SXKSA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies
3,259 -

RFQ

IPA040N08NM5SXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 6V, 10V 4mOhm @ 38A, 10V 3.8V @ 109µA 93 nC @ 10 V ±20V 6400 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA034N08NM5SXKSA1

IPA034N08NM5SXKSA1

TRENCH 40<-<100V

Infineon Technologies
2,677 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IPB040N08NF2SATMA1

IPB040N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies
3,998 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRFB3006GPBF

IRFB3006GPBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,775 -

RFQ

IRFB3006GPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7730PBF

IRFSL7730PBF

MOSFET N-CH 75V 195A TO262

Infineon Technologies
3,720 -

RFQ

IRFSL7730PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL60R225CFD7AUMA1

IPL60R225CFD7AUMA1

MOSFET N-CH 650V 12A VSON-4-1

Infineon Technologies
3,245 -

RFQ

IPL60R225CFD7AUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 225mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 68W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP80N08S406AKSA1

IPP80N08S406AKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
47,700 -

RFQ

IPP80N08S406AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 5.8mOhm @ 80A, 10V 4V @ 90µA 70 nC @ 10 V ±20V 4800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL7736M2TR

AUIRL7736M2TR

MOSFET N-CH 40V 179A DIRECTFET

Infineon Technologies
2,809 -

RFQ

AUIRL7736M2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 179A (Tc) 4.5V, 10V 3mOhm @ 67A, 10V 2.5V @ 150µA 78 nC @ 4.5 V ±16V 5055 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7530PBF

IRFSL7530PBF

MOSFET N-CH 60V 195A TO262

Infineon Technologies
2,831 -

RFQ

IRFSL7530PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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