Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

MOSFET N-CH 650V 11.4A D2PAK

Infineon Technologies
2,527 -

RFQ

IPB65R310CFDAATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1110 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1

MOSFET N-CH 100V 100A D2PAK

Infineon Technologies
2,500 -

RFQ

IPB042N10N3GE8187ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.2mOhm @ 50A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF4104STRL

AUIRF4104STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
3,652 -

RFQ

AUIRF4104STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V - 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI80N06S207AKSA2

IPI80N06S207AKSA2

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
500 -

RFQ

IPI80N06S207AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N04S402AKSA1

IPI120N04S402AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies
3,956 -

RFQ

IPI120N04S402AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R210CFD7ATMA1

IPB60R210CFD7ATMA1

MOSFET N-CH 650V 12A TO263-3-2

Infineon Technologies
2,798 -

RFQ

IPB60R210CFD7ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 250µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP70N10S3L12AKSA1

IPP70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies
2,506 -

RFQ

IPP70N10S3L12AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPF039N08NF2SATMA1

IPF039N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
3,493 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies
3,079 -

RFQ

IPB180N03S4L01ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S303ATMA1

IPB80N04S303ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
2,352 -

RFQ

IPB80N04S303ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.2mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIPC69N60CFDX1SA5

SIPC69N60CFDX1SA5

MOSFET N-CH HI POWER DIE

Infineon Technologies
3,697 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC60R037P7X7SA1

IPC60R037P7X7SA1

MOSFET N-CH HI POWER WAFER

Infineon Technologies
2,053 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
SPS03N60C3AKMA1

SPS03N60C3AKMA1

MOSFET N-CH 650V 3.2A TO251-3-11

Infineon Technologies
3,000 -

RFQ

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC60R070CFD7X7SA1

IPC60R070CFD7X7SA1

MOSFET N-CH HI POWER WAFER

Infineon Technologies
3,176 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
SIPC69N60CFDX1SA4

SIPC69N60CFDX1SA4

MOSFET N-CH HI POWER DIE

Infineon Technologies
3,722 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC50R045CPX2SA1

IPC50R045CPX2SA1

MOSFET N-CH HI POWER WAFER

Infineon Technologies
3,080 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPI90N04S402BSAKSA1

IPI90N04S402BSAKSA1

MOSFET N-CH 40V TO263

Infineon Technologies
2,236 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPI80N04S403BAKSA1

IPI80N04S403BAKSA1

MOSFET N-CH 40V TO263

Infineon Technologies
3,941 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
SIPC20S2N06LX6SA1

SIPC20S2N06LX6SA1

MOSFET N-CH TO263

Infineon Technologies
2,994 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IIPC10S2N08LCHIPX6SA1

IIPC10S2N08LCHIPX6SA1

MOSFET N-CHANNEL CHIP

Infineon Technologies
3,150 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 351352353354355356357358...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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