Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2903ZPBF

IRF2903ZPBF

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies
2,958 -

RFQ

IRF2903ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL40B209

IRL40B209

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
2,683 -

RFQ

IRL40B209

Ficha técnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.25mOhm @ 100A, 10V 2.4V @ 250µA 270 nC @ 4.5 V ±20V 15140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N06S208ATMA2

IPB80N06S208ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,542 -

RFQ

IPB80N06S208ATMA2

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 7.7mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4615TRL

AUIRFR4615TRL

MOSFET N-CH 150V 33A DPAK

Infineon Technologies
3,932 -

RFQ

AUIRFR4615TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R360CFD7XKSA1

IPA60R360CFD7XKSA1

MOSFET N-CH 650V 5A TO220

Infineon Technologies
2,043 -

RFQ

IPA60R360CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF2804LPBF

IRF2804LPBF

MOSFET N-CH 40V 75A TO262

Infineon Technologies
3,110 -

RFQ

IRF2804LPBF

Ficha técnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V - 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD70R950CEAUMA1

IPD70R950CEAUMA1

MOSFET N-CH 700V 7.4A TO252-3

Infineon Technologies
1,500 -

RFQ

IPD70R950CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 700 V 7.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 150µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V Super Junction 68W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC016N06NSSCATMA1

BSC016N06NSSCATMA1

TRENCH 40<-<100V PG-WSON-8

Infineon Technologies
2,626 -

RFQ

BSC016N06NSSCATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 234A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 3.3V @ 95µA 95 nC @ 10 V ±20V 6500 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA600N25NM3SXKSA1

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies
3,796 -

RFQ

IPA600N25NM3SXKSA1

Ficha técnica

Bulk,Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5210STRRPBF

IRF5210STRRPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
3,312 -

RFQ

IRF5210STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA65R310CFDXKSA2

IPA65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220

Infineon Technologies
2,570 -

RFQ

IPA65R310CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R310CFDXKSA2

IPP65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies
3,327 -

RFQ

IPP65R310CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90N06S4L04AKSA2

IPI90N06S4L04AKSA2

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies
9,000 -

RFQ

IPI90N06S4L04AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3110ZTRL

AUIRLR3110ZTRL

MOSFET N-CH 100V 63A DPAK

Infineon Technologies
2,013 -

RFQ

AUIRLR3110ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V - 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R385CPXKSA1

IPP60R385CPXKSA1

MOSFET N-CH 650V 9A TO220-3

Infineon Technologies
2,276 -

RFQ

IPP60R385CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA90R800C3XKSA2

IPA90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220

Infineon Technologies
3,890 -

RFQ

IPA90R800C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R800C3XKSA2

IPP90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220-3

Infineon Technologies
3,419 -

RFQ

IPP90R800C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N06S2H5AUMA1

IPB80N06S2H5AUMA1

IC MOSFET N-CH TO263-3

Infineon Technologies
2,628 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
AUXVNGP4062D-E

AUXVNGP4062D-E

IC DISCRETE

Infineon Technologies
3,339 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
AUXHKGP4062D-E

AUXHKGP4062D-E

IC DISCRETE

Infineon Technologies
2,814 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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