Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6726MTRPBF

IRF6726MTRPBF

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
2,480 -

RFQ

IRF6726MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 150µA 77 nC @ 4.5 V ±20V 6140 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7780MTRPBF

IRF7780MTRPBF

MOSFET N-CH 75V 89A DIRECTFET

Infineon Technologies
3,041 -

RFQ

IRF7780MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 89A (Tc) 6V, 10V 5.7mOhm @ 53A, 10V 3.7V @ 150µA 186 nC @ 10 V ±20V 6504 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL3206PBF

IRFSL3206PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies
2,864 -

RFQ

IRFSL3206PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

Infineon Technologies
3,398 -

RFQ

AUIRFZ48N

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 69A (Tc) 10V 14mOhm @ 40A, 10V 4V @ 100µA 63 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR8405TRL

AUIRFR8405TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies
879 -

RFQ

AUIRFR8405TRL

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMZA65R083M1HXKSA1

IMZA65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
2,928 -

RFQ

IMZA65R083M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 26A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410ZPBF

IRFSL4410ZPBF

MOSFET N-CH 100V 97A TO262

Infineon Technologies
2,389 -

RFQ

IRFSL4410ZPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405STRRPBF

IRF1405STRRPBF

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
3,419 -

RFQ

IRF1405STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB160N04S4LH1ATMA1

IPB160N04S4LH1ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
2,194 -

RFQ

IPB160N04S4LH1ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14950 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BTS240AHKSA1

BTS240AHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
12,798 -

RFQ

BTS240AHKSA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IMW65R039M1HXKSA1

IMW65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
133 -

RFQ

IMW65R039M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 18V 50mOhm @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V 1393 pF @ 400 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA65R039M1HXKSA1

IMZA65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
224 -

RFQ

IMZA65R039M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 50A (Tc) 18V 50mOhm @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V 1393 pF @ 400 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW65R030M1HXKSA1

IMW65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
131 -

RFQ

IMW65R030M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA65R030M1HXKSA1

IMZA65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
200 -

RFQ

IMZA65R030M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 53A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R380C6XKSA1

IPI65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO262-3

Infineon Technologies
2,378 -

RFQ

IPI65R380C6XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R380C6XKSA1

IPA65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO220

Infineon Technologies
3,956 -

RFQ

IPA65R380C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80P03P405ATMA2

IPB80P03P405ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
3,925 -

RFQ

IPB80P03P405ATMA2

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S08ATMA1

SPB80N06S08ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,079 -

RFQ

SPB80N06S08ATMA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 240µA 187 nC @ 10 V ±20V 3660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R280CFD7ATMA1

IPB60R280CFD7ATMA1

MOSFET N-CH 650V 9A TO263-3-2

Infineon Technologies
2,909 -

RFQ

IPB60R280CFD7ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 51W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFN8405TR

AUIRFN8405TR

MOSFET N-CH 40V 95A PQFN

Infineon Technologies
3,166 -

RFQ

AUIRFN8405TR

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2mOhm @ 50A, 10V 3.9V @ 100µA 117 nC @ 10 V ±20V 5142 pF @ 25 V - 3.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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