Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies
2,634 -

RFQ

IPL65R340CFDAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IMW120R020M1HXKSA1

IMW120R020M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,455 -

RFQ

IMW120R020M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 98A (Tc) 15V, 18V 26.9mOhm @ 41A, 18V 5.2V @ 17.6mA 83 nC @ 18 V +20V, -5V 3460 nF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50N10S3L16AKSA1

IPI50N10S3L16AKSA1

MOSFET N-CH 100V 50A TO262-3

Infineon Technologies
10,000 -

RFQ

IPI50N10S3L16AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80P04P405ATMA1

IPB80P04P405ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
2,077 -

RFQ

IPB80P04P405ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.9mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L04ATMA1

IPB80P04P4L04ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
2,553 -

RFQ

IPB80P04P4L04ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V ±16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies
3,436 -

RFQ

IRFSL7434PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R225C7ATMA2

IPB65R225C7ATMA2

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies
2,158 -

RFQ

IPB65R225C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR3636TRL

AUIRLR3636TRL

MOSFET N-CH 60V 99A DPAK

Infineon Technologies
2,482 -

RFQ

AUIRLR3636TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V - 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S207ATMA4

IPB80N06S207ATMA4

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
1,000 -

RFQ

IPB80N06S207ATMA4

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.3mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3607TRL

AUIRFR3607TRL

MOSFET N-CH 75V 80A DPAK

Infineon Technologies
2,170 -

RFQ

AUIRFR3607TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) - 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V - 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3207ZGPBF

IRFB3207ZGPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies
3,439 -

RFQ

IRFB3207ZGPBF

Ficha técnica

Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1404S

AUIRF1404S

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
2,049 -

RFQ

AUIRF1404S

Ficha técnica

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9332TRPBF

IRF9332TRPBF

MOSFET P-CH 30V 9.8A 8SO

Infineon Technologies
11,348 -

RFQ

IRF9332TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 4.5V, 10V 17.5mOhm @ 9.8A, 10V 2.4V @ 25µA 41 nC @ 10 V ±20V 1270 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLMS1902TRPBF

IRLMS1902TRPBF

MOSFET N-CH 20V 3.2A MICRO6

Infineon Technologies
5,757 -

RFQ

IRLMS1902TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.7V, 4.5V 100mOhm @ 2.2A, 4.5V 700mV @ 250µA (Min) 7 nC @ 4.5 V ±12V 300 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP716NH6327XTSA1

BSP716NH6327XTSA1

MOSFET N-CH 75V 2.3A SOT223-4

Infineon Technologies
2,547 -

RFQ

BSP716NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 2.3A (Ta) 4.5V, 10V 160mOhm @ 2.3A, 10V 1.8V @ 218µA 13.1 nC @ 10 V ±20V 315 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIPC36AN20X1SA2

SIPC36AN20X1SA2

TRANSISTOR N-CH

Infineon Technologies
3,062 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
SIPC36AN10X1SA2

SIPC36AN10X1SA2

TRANSISTOR N-CH

Infineon Technologies
3,659 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPA050N10NM5SXKSA1

IPA050N10NM5SXKSA1

MOSFET N-CH 100V 66A TO220

Infineon Technologies
2,632 -

RFQ

IPA050N10NM5SXKSA1

Ficha técnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Tc) 6V, 10V 5mOhm @ 33A, 10V 3.8V @ 84µA 68 nC @ 10 V ±20V 4700 pF @ 50 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7537PBF

IRFSL7537PBF

MOSFET N-CH 60V 173A TO262

Infineon Technologies
1,000 -

RFQ

IRFSL7537PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUA180N08S5N026AUMA1

IAUA180N08S5N026AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
2,407 -

RFQ

IAUA180N08S5N026AUMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tj) 6V, 10V 2.6mOhm @ 90A, 10V 3.8V @ 100µA 87 nC @ 10 V ±20V 5980 pF @ 40 V - 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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