Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR8403

AUIRFR8403

MOSFET N-CH 40V 100A DPAK

Infineon Technologies
2,098 -

RFQ

AUIRFR8403

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7787PBF

IRFB7787PBF

MOSFET N-CH 75V 76A TO220AB

Infineon Technologies
2,937 -

RFQ

IRFB7787PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP026N04NF2SAKMA1

IPP026N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
2,633 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPA50R350CPXKSA1

IPA50R350CPXKSA1

MOSFET N-CH 500V 10A TO220-FP

Infineon Technologies
152,790 -

RFQ

IPA50R350CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS131E3045ANTMA1

BTS131E3045ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
8,960 -

RFQ

BTS131E3045ANTMA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IMBG65R057M1HXTMA1

IMBG65R057M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
1,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPP65R060CFD7XKSA1

IPP65R060CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
980 -

RFQ

IPP65R060CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG120R090M1HXTMA1

IMBG120R090M1HXTMA1

SICFET N-CH 1.2KV 26A TO263

Infineon Technologies
1,861 -

RFQ

IMBG120R090M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) - 125mOhm @ 8.5A, 18V 5.7V @ 3.7mA 23 nC @ 18 V +18V, -15V 763 pF @ 800 V Standard 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4104TRL

AUIRFR4104TRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,118 -

RFQ

AUIRFR4104TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V - 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA320N20NM3SXKSA1

IPA320N20NM3SXKSA1

MOSFET N-CH 200V 26A TO220

Infineon Technologies
2,628 -

RFQ

IPA320N20NM3SXKSA1

Ficha técnica

Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 32mOhm @ 26A, 10V 4V @ 89µA 30 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP062NE7N3GXKSA1

IPP062NE7N3GXKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
2,221 -

RFQ

IPP062NE7N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 6.2mOhm @ 73A, 10V 3.8V @ 70µA 55 nC @ 10 V ±20V 3840 pF @ 37.5 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R420CFDAATMA1

IPD65R420CFDAATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies
2,437 -

RFQ

IPD65R420CFDAATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 345µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR3710ZTRL

AUIRFR3710ZTRL

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,598 -

RFQ

AUIRFR3710ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP77N06S212AKSA2

IPP77N06S212AKSA2

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies
2,681 -

RFQ

IPP77N06S212AKSA2

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7734PBF

IRFSL7734PBF

MOSFET N-CH 75V 183A TO262

Infineon Technologies
3,612 -

RFQ

IRFSL7734PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG65R048M1HXTMA1

IMBG65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
1,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IMW65R083M1HXKSA1

IMW65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
162 -

RFQ

IMW65R083M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80P03P405ATMA1

IPB80P03P405ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
3,527 -

RFQ

IPB80P03P405ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P03P4L04ATMA1

IPB80P03P4L04ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
2,441 -

RFQ

IPB80P03P4L04ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSD314SPEH6327XTSA1

BSD314SPEH6327XTSA1

MOSFET P-CH 30V 1.5A SOT363-6

Infineon Technologies
14,814 -

RFQ

BSD314SPEH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 140mOhm @ 1.5A, 10V 2V @ 6.3µA 2.9 nC @ 10 V ±20V 294 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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