Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA029N06NM5SXKSA1

IPA029N06NM5SXKSA1

MOSFET N-CH 60V 87A TO220

Infineon Technologies
950 -

RFQ

IPA029N06NM5SXKSA1

Ficha técnica

Bulk,Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 87A (Tc) 6V, 10V 2.9mOhm @ 87A, 10V 3.3V @ 36µA 74 nC @ 10 V ±20V 5300 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR2407TRL

AUIRFR2407TRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,949 -

RFQ

AUIRFR2407TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) - 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V - 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIPC69SN60C3X3SA1

SIPC69SN60C3X3SA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S304ATMA1

IPB80N04S304ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,941 -

RFQ

IPB80N04S304ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
2,305 -

RFQ

IPB120N04S4L02ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14560 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R360CFD7ATMA1

IPB60R360CFD7ATMA1

MOSFET N-CH 650V 7A TO263-3-2

Infineon Technologies
3,754 -

RFQ

IPB60R360CFD7ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL40B212

IRL40B212

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
2,020 -

RFQ

IRL40B212

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA028N04NM3SXKSA1

IPA028N04NM3SXKSA1

TRENCH <= 40V PG-TO220-3

Infineon Technologies
3,353 -

RFQ

IPA028N04NM3SXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 89A (Tc) 10V 2.8mOhm @ 89A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 9500 pF @ 20 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB065N10N3GATMA1

IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
3,002 -

RFQ

IPB065N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 6.5mOhm @ 80A, 10V 3.5V @ 90µA 64 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR48ZTRL

AUIRFR48ZTRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,355 -

RFQ

AUIRFR48ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

MOSFET N-CH 150V 9A/30A 2WDSON

Infineon Technologies
3,735 -

RFQ

BSB280N15NZ3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 9A (Ta), 30A (Tc) 10V 28mOhm @ 30A, 10V 4V @ 60µA 21 nC @ 10 V ±20V 1600 pF @ 75 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP65R090CFD7XKSA1

IPP65R090CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
500 -

RFQ

IPP65R090CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP24N60C3XKSA1

SPP24N60C3XKSA1

MOSFET N-CH 650V 24.3A TO220-3

Infineon Technologies
208 -

RFQ

SPP24N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA030N10N3GXKSA1

IPA030N10N3GXKSA1

MOSFET N-CH 100V 79A TO220-FP

Infineon Technologies
500 -

RFQ

IPA030N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 6V, 10V 3mOhm @ 79A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB020N04NGATMA1

IPB020N04NGATMA1

MOSFET N-CH 40V 140A TO263-7

Infineon Technologies
3,082 -

RFQ

IPB020N04NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 140A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 9700 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010-7P

AUIRFS4010-7P

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies
3,237 -

RFQ

AUIRFS4010-7P

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R385CPAUMA1

IPL60R385CPAUMA1

MOSFET N-CH 600V 9A 4VSON

Infineon Technologies
35,246 -

RFQ

IPL60R385CPAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 17 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA040N06NXKSA1

IPA040N06NXKSA1

MOSFET N-CH 60V 69A TO220-FP

Infineon Technologies
3,083 -

RFQ

IPA040N06NXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 69A (Tc) 6V, 10V 4mOhm @ 69A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC010N04LSCATMA1

BSC010N04LSCATMA1

DIFFERENTIATED MOSFETS

Infineon Technologies
2,351 -

RFQ

Tape & Reel (TR) - Active - - - 282A (Tc) - - - - - - - - - -
IPB65R310CFDATMA2

IPB65R310CFDATMA2

MOSFET N-CH 650V 11.4A TO263-3

Infineon Technologies
3,937 -

RFQ

IPB65R310CFDATMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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