Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IST011N06NM5AUMA1

IST011N06NM5AUMA1

TRENCH 40<-<100V PG-HSOF-5

Infineon Technologies
2,000 -

RFQ

IST011N06NM5AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 38A (Ta), 399A (Tc) 6V, 10V 1.1mOhm @ 100A, 10V 3.3V @ 148µA 154 nC @ 10 V ±20V 8100 pF @ 30 V - 3.8W (Ta), 313W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA15N60C3XKSA1

SPA15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-FP

Infineon Technologies
135 -

RFQ

SPA15N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R155CFD7XKSA1

IPP65R155CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
489 -

RFQ

IPP65R155CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS132E3045ANTMA1

BTS132E3045ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
13,000 -

RFQ

BTS132E3045ANTMA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPB80N06S209ATMA2

IPB80N06S209ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,214 -

RFQ

IPB80N06S209ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.8mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R280P6ATMA1

IPB60R280P6ATMA1

MOSFET N-CH 600V 13.8A D2PAK

Infineon Technologies
2,849 -

RFQ

IPB60R280P6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V 4.5V @ 430µA 25.5 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC100N10S5L040ATMA1

IAUC100N10S5L040ATMA1

MOSFET N-CH 100V 100A 8TDSON-34

Infineon Technologies
2,761 -

RFQ

Tape & Reel (TR) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 90µA 78 nC @ 10 V ±20V 5200 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI47N10S33AKSA1

IPI47N10S33AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies
3,379 -

RFQ

IPI47N10S33AKSA1

Ficha técnica

Tube SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 33mOhm @ 33A, 10V 4V @ 2mA 105 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI47N10SL26AKSA1

IPI47N10SL26AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies
2,107 -

RFQ

IPI47N10SL26AKSA1

Ficha técnica

Tube SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA037N08N3GXKSA1

IPA037N08N3GXKSA1

MOSFET N-CH 80V 75A TO220-FP

Infineon Technologies
500 -

RFQ

IPA037N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 6V, 10V 3.7mOhm @ 75A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1404

AUIRF1404

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
838 -

RFQ

AUIRF1404

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R145CFD7XKSA1

IPW60R145CFD7XKSA1

MOSFET HIGH POWER

Infineon Technologies
178 -

RFQ

IPW60R145CFD7XKSA1

Ficha técnica

Tube - Active - MOSFET (Metal Oxide) - 16A (Tc) - - - - - - Standard - - Surface Mount
IPA65R420CFDXKSA1

IPA65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies
3,675 -

RFQ

IPA65R420CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R420CFDXKSA1

IPP65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220-3

Infineon Technologies
333 -

RFQ

IPP65R420CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R420CFDXKSA2

IPA65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220

Infineon Technologies
3,179 -

RFQ

IPA65R420CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R420CFDXKSA2

IPP65R420CFDXKSA2

MOSFET N-CH 650V 8.7A TO220-3

Infineon Technologies
2,867 -

RFQ

IPP65R420CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3007STRLPBF

IRF3007STRLPBF

MOSFET N CH 75V 62A D2PAK

Infineon Technologies
3,060 -

RFQ

IRF3007STRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R380E6XKSA1

IPP60R380E6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Infineon Technologies
500 -

RFQ

IPP60R380E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP093N06N3GXKSA1

IPP093N06N3GXKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
2,546 -

RFQ

IPP093N06N3GXKSA1

Ficha técnica

Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 34µA 36 nC @ 10 V ±20V 2900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB90N06S404ATMA2

IPB90N06S404ATMA2

MOSFET N-CH 60V 90A D2PAK

Infineon Technologies
2,766 -

RFQ

IPB90N06S404ATMA2

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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