Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI80N04S403AKSA1

IPI80N04S403AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
3,547 -

RFQ

IPI80N04S403AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP530N15N3GXKSA1

IPP530N15N3GXKSA1

MOSFET N-CH 150V 21A TO220-3

Infineon Technologies
500 -

RFQ

IPP530N15N3GXKSA1

Ficha técnica

Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI20N60CFDXKSA1

SPI20N60CFDXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,500 -

RFQ

SPI20N60CFDXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS112A

BTS112A

N-CHANNEL POWER MOSFET

Infineon Technologies
3,397 -

RFQ

BTS112A

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
BTS244ZE3043

BTS244ZE3043

N-CHANNEL POWER MOSFET

Infineon Technologies
4,726 -

RFQ

BTS244ZE3043

Ficha técnica

Bulk * Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V - 170W (Tc) -40°C ~ 175°C (TJ) Through Hole
AUIRFR3504ZTRL

AUIRFR3504ZTRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,013 -

RFQ

AUIRFR3504ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V - 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R1K2C3XKSA2

IPA90R1K2C3XKSA2

MOSFET N-CH 900V 5.1A TO220

Infineon Technologies
3,133 -

RFQ

IPA90R1K2C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R1K2C3XKSA2

IPI90R1K2C3XKSA2

MOSFET N-CH 900V 5.1A TO262-3

Infineon Technologies
2,843 -

RFQ

IPI90R1K2C3XKSA2

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R1K2C3XKSA2

IPP90R1K2C3XKSA2

MOSFET N-CH 900V 5.1A TO220-3

Infineon Technologies
2,819 -

RFQ

IPP90R1K2C3XKSA2

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80N04S403AKSA1

IPP80N04S403AKSA1

MOSFET N-CH 40V 80A TO220-3-1

Infineon Technologies
2,377 -

RFQ

IPP80N04S403AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPC300N15N3RX2MA1

IPC300N15N3RX2MA1

N-CHANNEL POWER MOSFET

Infineon Technologies
6,000 -

RFQ

IPC300N15N3RX2MA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFSL7540PBF

IRFSL7540PBF

MOSFET N-CH 60V 110A TO262

Infineon Technologies
4,200 -

RFQ

IRFSL7540PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3410TR

AUIRLR3410TR

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
3,820 -

RFQ

AUIRLR3410TR

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6724MTRPBF

IRF6724MTRPBF

MOSFET N-CH 30V 27A DIRECTFET

Infineon Technologies
2,350 -

RFQ

IRF6724MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF40DM229

IRF40DM229

MOSFET N-CH 40V 159A DIRECTFET

Infineon Technologies
2,100 -

RFQ

IRF40DM229

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 159A (Tc) 6V, 10V 1.85mOhm @ 97A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5317 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD90N04S304ATMA1

IPD90N04S304ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,576 -

RFQ

IPD90N04S304ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.6mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BTS247ZE3062ANTMA1

BTS247ZE3062ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
137,000 -

RFQ

BTS247ZE3062ANTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IAUA250N04S6N005AUMA1

IAUA250N04S6N005AUMA1

OPTIMOS POWER MOSFET

Infineon Technologies
1,990 -

RFQ

IAUA250N04S6N005AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Ta) 7V, 10V 0.55mOhm @ 100A, 10V 3V @ 145µA 170 nC @ 10 V ±20V 11144 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90P03P404ATMA1

IPD90P03P404ATMA1

MOSFET P-CH 30V 90A TO252-3

Infineon Technologies
2,122 -

RFQ

IPD90P03P404ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL5615PBF

IRFSL5615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies
3,476 -

RFQ

IRFSL5615PBF

Ficha técnica

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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