Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010NSTRRPBF

IRF1010NSTRRPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,545 -

RFQ

IRF1010NSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP033N04NF2SAKMA1

IPP033N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
3,271 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IAUC100N08S5N034ATMA1

IAUC100N08S5N034ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
3,008 -

RFQ

IAUC100N08S5N034ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 132A (Tj) 6V, 10V 3.4mOhm @ 50A, 10V 3.8V @ 78µA 66 nC @ 10 V ±20V 4559 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB77N06S212ATMA2

IPB77N06S212ATMA2

MOSFET N-CH 55V 77A TO263-3

Infineon Technologies
3,937 -

RFQ

IPB77N06S212ATMA2

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 11.7mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,078 -

RFQ

IPB80N06S2L11ATMA2

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD06N60C3ATMA1

SPD06N60C3ATMA1

MOSFET N-CH 600V 6.2A TO252-3

Infineon Technologies
2,580 -

RFQ

SPD06N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N04S306ATMA1

IPB80N04S306ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,588 -

RFQ

IPB80N04S306ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.4mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR8403TRL

AUIRFR8403TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies
2,913 -

RFQ

AUIRFR8403TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA060N06NXKSA1

IPA060N06NXKSA1

MOSFET N-CH 60V 45A TO220-FP

Infineon Technologies
12,251 -

RFQ

IPA060N06NXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 3.3V @ 36µA 32 nC @ 10 V ±20V 2500 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB100N04S2L-03ATMA2

IPB100N04S2L-03ATMA2

N-CHANNEL POWER MOSFET

Infineon Technologies
17,740 -

RFQ

IPB100N04S2L-03ATMA2

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB042N10NF2SATMA1

IPB042N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
2,616 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPI023NE7N3G

IPI023NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,746 -

RFQ

IPI023NE7N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V - 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN60R280PFD7SXKSA1

IPAN60R280PFD7SXKSA1

CONSUMER PG-TO220-3

Infineon Technologies
3,000 -

RFQ

IPAN60R280PFD7SXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 15.3 nC @ 10 V ±20V 656 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA65R660CFDXKSA2

IPA65R660CFDXKSA2

MOSFET N-CH 700V 6A TO220

Infineon Technologies
3,232 -

RFQ

IPA65R660CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPF049N10NF2SATMA1

IPF049N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
2,002 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
15,835 -

RFQ

IPB80N03S4L02ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.4mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI040N06N3GXKSA1

IPI040N06N3GXKSA1

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies
2,716 -

RFQ

IPI040N06N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1018E

AUIRF1018E

MOSFET N-CH 60V 79A TO220AB

Infineon Technologies
2,700 -

RFQ

AUIRF1018E

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) - 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V - 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS7787TRLPBF

IRFS7787TRLPBF

MOSFET N-CH 75V 76A D2PAK

Infineon Technologies
2,511 -

RFQ

IRFS7787TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R660CFDXKSA1

IPA65R660CFDXKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies
500 -

RFQ

IPA65R660CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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