Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRF7732S2TR

AUIRF7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

Infineon Technologies
2,856 -

RFQ

AUIRF7732S2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 10V 6.95mOhm @ 33A, 10V 4V @ 50µA 45 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2905ZTRL

AUIRFR2905ZTRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,195 -

RFQ

AUIRFR2905ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSF134N10NJ3GXUMA1

BSF134N10NJ3GXUMA1

MOSFET N-CH 100V 9A/40A 2WDSON

Infineon Technologies
2,918 -

RFQ

BSF134N10NJ3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA126N10NM3SXKSA1

IPA126N10NM3SXKSA1

MOSFET N-CH 100V 39A TO220

Infineon Technologies
2,003 -

RFQ

IPA126N10NM3SXKSA1

Ficha técnica

Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 6V, 10V 12.6mOhm @ 39A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD033N06NATMA1

IPD033N06NATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
3,863 -

RFQ

IPD033N06NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 3.3mOhm @ 90A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3400 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB45P03P4L11ATMA2

IPB45P03P4L11ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
2,750 -

RFQ

IPB45P03P4L11ATMA2

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 10.8mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R150CFD

IPI65R150CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
17,139 -

RFQ

IPI65R150CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI15N60C3

SPI15N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
16,394 -

RFQ

SPI15N60C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR2905ZTR

AUIRFR2905ZTR

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,744 -

RFQ

AUIRFR2905ZTR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V - 1380 pF @ 25 V - - - Surface Mount
IPI80N06S4L07AKSA2

IPI80N06S4L07AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies
6,827 -

RFQ

IPI80N06S4L07AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 72 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S407AKSA2

IPP80N06S407AKSA2

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
1,194 -

RFQ

IPP80N06S407AKSA2

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR8401TRL

AUIRFR8401TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies
2,156 -

RFQ

AUIRFR8401TRL

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N03S4L03ATMA1

IPB120N03S4L03ATMA1

MOSFET N-CH 30V 120A D2PAK

Infineon Technologies
15,000 -

RFQ

IPB120N03S4L03ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 3mOhm @ 100A, 10V 2.2V @ 40µA 72 nC @ 10 V ±16V 5300 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4292TRL

AUIRFR4292TRL

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies
3,462 -

RFQ

AUIRFR4292TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R600E6XKSA1

IPA60R600E6XKSA1

MOSFET N-CH 600V 7.3A TO220-FP

Infineon Technologies
3,873 -

RFQ

IPA60R600E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB055N08NF2SATMA1

IPB055N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies
3,064 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPA60R600C6XKSA1

IPA60R600C6XKSA1

MOSFET N-CH 600V 7.3A TO220-FP

Infineon Technologies
386 -

RFQ

IPA60R600C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI15N60CFD

SPI15N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
11,415 -

RFQ

SPI15N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFU4510PBF

IRFU4510PBF

MOSFET N-CH 100V 56A IPAK

Infineon Technologies
2,955 -

RFQ

IRFU4510PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1405-INF

AUIRF1405-INF

AUTOMOTIVE HEXFET N CHANNEL

Infineon Technologies
22,100 -

RFQ

AUIRF1405-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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