Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB80N06S407ATMA2

IPB80N06S407ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies
2,596 -

RFQ

IPB80N06S407ATMA2

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V - 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N12S3L15ATMA1

IPD50N12S3L15ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies
3,947 -

RFQ

IPD50N12S3L15ATMA1

Ficha técnica

Tape & Reel (TR),Bulk * Not For New Designs - - - - - - - - - - - - - -
IPB60R520CP

IPB60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
12,996 -

RFQ

IPB60R520CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD65R600E6

IPD65R600E6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
34,028 -

RFQ

IPD65R600E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPAW60R360P7SE8228XKSA1

IPAW60R360P7SE8228XKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies
2,291 -

RFQ

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPB65R420CFD

IPB65R420CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
1,666 -

RFQ

IPB65R420CFD

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N04S4L04ATMA1

IPB80N04S4L04ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,412 -

RFQ

IPB80N04S4L04ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R420CFD

IPI65R420CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
10,945 -

RFQ

IPI65R420CFD

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ111S

BUZ111S

N-CHANNEL POWER MOSFET

Infineon Technologies
2,867 -

RFQ

BUZ111S

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6645TRPBF

IRF6645TRPBF

MOSFET N-CH 100V 5.7A DIRECTFET

Infineon Technologies
9,580 -

RFQ

IRF6645TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.7A (Ta), 25A (Tc) 10V 35mOhm @ 5.7A, 10V 4.9V @ 50µA 20 nC @ 10 V ±20V 890 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRL7732S2TR

AUIRL7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

Infineon Technologies
2,091 -

RFQ

AUIRL7732S2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 4.5V, 10V 6.6mOhm @ 35A, 10V 2.5V @ 50µA 33 nC @ 4.5 V ±16V 2020 pF @ 25 V - 2.2W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ESTRRPBF

IRFZ44ESTRRPBF

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,239 -

RFQ

IRFZ44ESTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104TRLPBF

IRFR4104TRLPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,729 -

RFQ

IRFR4104TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R660CFDATMA1

IPD65R660CFDATMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies
3,977 -

RFQ

IPD65R660CFDATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R180P7SE8228AUMA1

IPD60R180P7SE8228AUMA1

MOSFET N-CH 600V 18A TO252-3

Infineon Technologies
2,090 -

RFQ

Tape & Reel (TR) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI07N65C3XKSA1

SPI07N65C3XKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
22,500 -

RFQ

SPI07N65C3XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFU7540PBF

IRFU7540PBF

MOSFET N-CH 60V 90A IPAK

Infineon Technologies
3,571 -

RFQ

IRFU7540PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N06S4L07ATMA2

IPB80N06S4L07ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies
2,787 -

RFQ

IPB80N06S4L07ATMA2

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD85P04P407ATMA1

IPD85P04P407ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies
1,800 -

RFQ

IPD85P04P407ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 10V 7.3mOhm @ 85A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP135L6906

BSP135L6906

N-CHANNEL POWER MOSFET

Infineon Technologies
12,702 -

RFQ

BSP135L6906

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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