Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPW11N60S5

SPW11N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
15,052 -

RFQ

SPW11N60S5

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB70P04P409ATMA1

IPB70P04P409ATMA1

MOSFET N-CH 40V 72A D2PAK

Infineon Technologies
3,803 -

RFQ

IPB70P04P409ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB050N10NF2SATMA1

IPB050N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,661 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSC019N04LSTATMA1

BSC019N04LSTATMA1

DIFFERENTIATED MOSFETS

Infineon Technologies
3,590 -

RFQ

Tape & Reel (TR) - Active - - - 28A (Ta), 161A (Tc) - - - - - - - - - -
IPI80N06S407AKSA2

IPI80N06S407AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies
8,500 -

RFQ

IPI80N06S407AKSA2

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50R399CPATMA1

IPD50R399CPATMA1

LOW POWER_LEGACY

Infineon Technologies
3,736 -

RFQ

IPD50R399CPATMA1

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies
3,575 -

RFQ

BSC159N10LSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 63A (Tc) 4.5V, 10V 15.9mOhm @ 50A, 10V 2.4V @ 72µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
3,711 -

RFQ

IPB80P03P4L07ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRRPBF

IRF3710STRRPBF

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
2,822 -

RFQ

IRF3710STRRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA083N10NM5SXKSA1

IPA083N10NM5SXKSA1

MOSFET N-CH 100V 50A TO220

Infineon Technologies
2,064 -

RFQ

IPA083N10NM5SXKSA1

Ficha técnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 6V, 10V 8.3mOhm @ 25A, 10V 3.8V @ 49µA 40 nC @ 10 V ±20V 2700 pF @ 50 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R420CFDATMA1

IPD65R420CFDATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies
3,807 -

RFQ

IPD65R420CFDATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R420CFDATMA2

IPD65R420CFDATMA2

MOSFET N-CH 650V 8.7A TO251-3

Infineon Technologies
2,234 -

RFQ

IPD65R420CFDATMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB70P04P409ATMA2

IPB70P04P409ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
3,753 -

RFQ

IPB70P04P409ATMA2

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R380C6ATMA1

IPD65R380C6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies
2,932 -

RFQ

IPD65R380C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2807STRRPBF

IRF2807STRRPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
2,620 -

RFQ

IRF2807STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P407ATMA1

IPB80P04P407ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,608 -

RFQ

IPB80P04P407ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L06ATMA1

IPB80P04P4L06ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,657 -

RFQ

IPB80P04P4L06ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.4mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V ±16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB70N12S311ATMA1

IPB70N12S311ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies
3,461 -

RFQ

IPB70N12S311ATMA1

Ficha técnica

Tape & Reel (TR),Bulk * Not For New Designs - - - - - - - - - - - - - -
IPD90N04S3H4ATMA1

IPD90N04S3H4ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,335 -

RFQ

IPD90N04S3H4ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.3mOhm @ 90A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P03P4L07ATMA2

IPB80P03P4L07ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
2,535 -

RFQ

IPB80P03P4L07ATMA2

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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