Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD90P04P405AUMA1

IPD90P04P405AUMA1

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies
2,641 -

RFQ

IPD90P04P405AUMA1

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - 10V - - - ±20V - - - - -
IRF640NSTRRPBF

IRF640NSTRRPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies
3,334 -

RFQ

IRF640NSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies
3,503 -

RFQ

IPD85P04P4L06ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 6.4mOhm @ 85A, 10V 2.2V @ 150µA 104 nC @ 10 V ±16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP048N04NGXKSA1

IPP048N04NGXKSA1

MOSFET N-CH 40V 70A TO220-3

Infineon Technologies
2,993 -

RFQ

IPP048N04NGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 4.8mOhm @ 70A, 10V 4V @ 200µA 41 nC @ 10 V ±20V 3300 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6637TRPBF

IRF6637TRPBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,900 -

RFQ

IRF6637TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 59A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1330 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRLR2703TRL

AUIRLR2703TRL

MOSFET N-CH 30V 20A DPAK

Infineon Technologies
2,496 -

RFQ

AUIRLR2703TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V - 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5305STRRPBF

IRF5305STRRPBF

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies
3,152 -

RFQ

IRF5305STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI70N04S406AKSA1

IPI70N04S406AKSA1

MOSFET N-CH 40V 70A TO262-3

Infineon Technologies
480 -

RFQ

IPI70N04S406AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R520CP

IPA60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
55,486 -

RFQ

IPA60R520CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI50R250CP

IPI50R250CP

N-CHANNEL POWER MOSFET

Infineon Technologies
10,500 -

RFQ

IPI50R250CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R380P6

IPP60R380P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
28,500 -

RFQ

IPP60R380P6

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) - 10.6A (Tc) - - - - - - - - -55°C ~ 150°C (TJ) Through Hole
IRLR3110ZTRRPBF

IRLR3110ZTRRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,637 -

RFQ

IRLR3110ZTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80N04S306ATMA1

IPD80N04S306ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
3,054 -

RFQ

IPD80N04S306ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80N04S306BATMA1

IPD80N04S306BATMA1

MOSFET N-CHANNEL_30/40V

Infineon Technologies
2,358 -

RFQ

IPD80N04S306BATMA1

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
AUIRFR4105ZTRL

AUIRFR4105ZTRL

MOSFET N-CH 55V 20A DPAK

Infineon Technologies
2,495 -

RFQ

AUIRFR4105ZTRL

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC152N10NSFG

BSC152N10NSFG

N-CHANNEL POWER MOSFET

Infineon Technologies
17,577 -

RFQ

BSC152N10NSFG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPSA70R360P7SAKMA1

IPSA70R360P7SAKMA1

MOSFET N-CH 700V 12.5A TO251-3

Infineon Technologies
876 -

RFQ

IPSA70R360P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 400 V ±16V 517 pF @ 400 V - 59.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF6618TRPBF

IRF6618TRPBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
37,385 -

RFQ

IRF6618TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.35V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BTS247Z

BTS247Z

N-CHANNEL POWER MOSFET

Infineon Technologies
12,934 -

RFQ

BTS247Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP084N06L3GXKSA1

IPP084N06L3GXKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
1,664 -

RFQ

IPP084N06L3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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