Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF200S234

IRF200S234

MOSFET N-CH 200V 90A D2PAK

Infineon Technologies
2,632 -

RFQ

IRF200S234

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 16.9mOhm @ 51A, 10V 5V @ 250µA 162 nC @ 10 V ±20V 6484 pF @ 50 V - 417W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R230P6XKSA1

IPA60R230P6XKSA1

MOSFET N-CH 600V 16.8A TO220-FP

Infineon Technologies
166 -

RFQ

IPA60R230P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC40N08S5L140ATMA1

IAUC40N08S5L140ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
2,348 -

RFQ

IAUC40N08S5L140ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V 2V @ 15µA 18.6 nC @ 10 V ±20V 1078 pF @ 40 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7740PBF

IRFB7740PBF

MOSFET N-CH 75V 87A TO220AB

Infineon Technologies
1,126 -

RFQ

IRFB7740PBF

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 87A (Tc) 6V, 10V 7.3mOhm @ 52A, 10V 3.7V @ 100µA 122 nC @ 10 V ±20V 4650 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R160P6XKSA1

IPA60R160P6XKSA1

MOSFET N-CH 600V 23.8A TO220-FP

Infineon Technologies
495 -

RFQ

IPA60R160P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS244ZE3043AKSA2

BTS244ZE3043AKSA2

MOSFET N-CH 55V 35A TO220-5-12

Infineon Technologies
284 -

RFQ

BTS244ZE3043AKSA2

Ficha técnica

Tube TEMPFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLR4132TRPBF

IRLR4132TRPBF

MOSFET N-CH 30V 160A DPAK

Infineon Technologies
3,455 -

RFQ

IRLR4132TRPBF

Ficha técnica

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
IPD048N06L3GBTMA1

IPD048N06L3GBTMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
2,351 -

RFQ

IPD048N06L3GBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.8mOhm @ 90A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISP12DP06NMXTSA1

ISP12DP06NMXTSA1

MOSFET P-CH 60V 2.8A SOT223-4

Infineon Technologies
2,778 -

RFQ

ISP12DP06NMXTSA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) 10V 125mOhm @ 2.8A, 10V 4V @ 520µA 20.2 nC @ 10 V ±20V 790 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R145CFD7XTMA1

IPT60R145CFD7XTMA1

MOSFET N-CH 600V 19A 8HSOF

Infineon Technologies
2,000 -

RFQ

IPT60R145CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 145mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 116W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSO080P03NS3GXUMA1

BSO080P03NS3GXUMA1

MOSFET P-CH 30V 12A 8DSO

Infineon Technologies
3,721 -

RFQ

BSO080P03NS3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 6V, 10V 8mOhm @ 14.8A, 10V 3.1V @ 150µA 81 nC @ 10 V ±25V 6750 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7406TRPBF

IRF7406TRPBF

MOSFET P-CH 30V 5.8A 8SO

Infineon Technologies
3,363 -

RFQ

IRF7406TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF3305

AUIRF3305

MOSFET N-CH 55V 140A TO220

Infineon Technologies
973 -

RFQ

AUIRF3305

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R105CFD7XKSA1

IPP60R105CFD7XKSA1

MOSFET N CH

Infineon Technologies
226 -

RFQ

IPP60R105CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 105mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD079N06L3GATMA1

IPD079N06L3GATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies
2,036 -

RFQ

IPD079N06L3GATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 7.9mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R080P7XKSA1

IPA60R080P7XKSA1

MOSFET N-CH 600V 37A TO220

Infineon Technologies
493 -

RFQ

IPA60R080P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 80mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R170CFD7XKSA1

IPW60R170CFD7XKSA1

MOSFET N-CH 650V 14A TO247-3

Infineon Technologies
240 -

RFQ

IPW60R170CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R1K0C3XK

IPP90R1K0C3XK

MOSFET N-CH 900V 5.7A TO220-3

Infineon Technologies
2,559 -

RFQ

IPP90R1K0C3XK

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR3410TRRPBF

IRLR3410TRRPBF

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
3,895 -

RFQ

IRLR3410TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R045C7XKSA1

IPA65R045C7XKSA1

MOSFET N-CH 650V 18A TO220-FP

Infineon Technologies
389 -

RFQ

IPA65R045C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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