Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010EPBF

IRF1010EPBF

MOSFET N-CH 60V 84A TO220AB

Infineon Technologies
7,574 -

RFQ

IRF1010EPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7446PBF

IRFB7446PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
4,904 -

RFQ

IRFB7446PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC037N08NS5ATMA1

BSC037N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
11,623 -

RFQ

BSC037N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 2.5W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R225C7ATMA1

IPD65R225C7ATMA1

MOSFET N-CH 650V 11A TO252-3

Infineon Technologies
15,936 -

RFQ

IPD65R225C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1010NPBF

IRF1010NPBF

MOSFET N-CH 55V 85A TO220AB

Infineon Technologies
7,762 -

RFQ

IRF1010NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6717MTRPBF

IRF6717MTRPBF

MOSFET N-CH 25V 38A DIRECTFET

Infineon Technologies
30,188 -

RFQ

IRF6717MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.25mOhm @ 38A, 10V 2.35V @ 150µA 69 nC @ 4.5 V ±20V 6750 pF @ 13 V - 2.8W (Ta), 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFZ44NLPBF

IRFZ44NLPBF

MOSFET N-CH 55V 49A TO262

Infineon Technologies
9,590 -

RFQ

IRFZ44NLPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405STRLPBF

IRF1405STRLPBF

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
600 -

RFQ

IRF1405STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710PBF

IRF3710PBF

MOSFET N-CH 100V 57A TO220AB

Infineon Technologies
1,359 -

RFQ

IRF3710PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807PBF

IRF2807PBF

MOSFET N-CH 75V 82A TO220AB

Infineon Technologies
5,621 -

RFQ

IRF2807PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7440PBF

IRFB7440PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
1,306 -

RFQ

IRFB7440PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 135 nC @ 10 V ±20V 4730 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3110ZPBF

IRLU3110ZPBF

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
5,165 -

RFQ

IRLU3110ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1310NPBF

IRFI1310NPBF

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies
1,228 -

RFQ

IRFI1310NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4615PBF

IRFU4615PBF

MOSFET N-CH 150V 33A IPAK

Infineon Technologies
1,344 -

RFQ

IRFU4615PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP147N12N3GXKSA1

IPP147N12N3GXKSA1

MOSFET N-CH 120V 56A TO220-3

Infineon Technologies
11,678 -

RFQ

IPP147N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4615PBF

IRFB4615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies
5,930 -

RFQ

IRFB4615PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404PBF

IRF1404PBF

MOSFET N-CH 40V 202A TO220AB

Infineon Technologies
2,419 -

RFQ

IRF1404PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 202A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R095C7ATMA2

IPB65R095C7ATMA2

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies
2,001 -

RFQ

IPB65R095C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4019PBF

IRFB4019PBF

MOSFET N-CH 150V 17A TO220AB

Infineon Technologies
2,346 -

RFQ

IRFB4019PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Tc) 10V 95mOhm @ 10A, 10V 4.9V @ 50µA 20 nC @ 10 V ±20V 800 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803PBF

IRL3803PBF

MOSFET N-CH 30V 140A TO220AB

Infineon Technologies
3,026 -

RFQ

IRL3803PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 307308309310311312313314...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario