Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF630NPBF

IRF630NPBF

MOSFET N-CH 200V 9.3A TO220AB

Infineon Technologies
12,714 -

RFQ

IRF630NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU220NPBF

IRFU220NPBF

MOSFET N-CH 200V 5A IPAK

Infineon Technologies
6,792 -

RFQ

IRFU220NPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO301SPHXUMA1

BSO301SPHXUMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies
1,132 -

RFQ

BSO301SPHXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 4.5V, 10V 8mOhm @ 14.9A, 10V 2V @ 250µA 136 nC @ 10 V ±20V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5215TRPBF

IRFH5215TRPBF

MOSFET N-CH 150V 5A/27A PQFN

Infineon Technologies
6,232 -

RFQ

IRFH5215TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 27A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 100µA 32 nC @ 10 V ±20V 1350 pF @ 50 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6668TRPBF

IRF6668TRPBF

MOSFET N-CH 80V 55A DIRECTFET MZ

Infineon Technologies
31,000 -

RFQ

IRF6668TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 15mOhm @ 12A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1320 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1010ESTRLPBF

IRF1010ESTRLPBF

MOSFET N-CH 60V 84A D2PAK

Infineon Technologies
2,886 -

RFQ

IRF1010ESTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ZPBF

IRFZ44ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
3,236 -

RFQ

IRFZ44ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR120NTRL

AUIRLR120NTRL

MOSFET N-CH 100V 10A DPAK

Infineon Technologies
7,601 -

RFQ

AUIRLR120NTRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NPBF

IRF520NPBF

MOSFET N-CH 100V 9.7A TO220AB

Infineon Technologies
3,947 -

RFQ

IRF520NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3410PBF

IRLU3410PBF

MOSFET N-CH 100V 17A IPAK

Infineon Technologies
10,589 -

RFQ

IRLU3410PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU5305PBF

IRFU5305PBF

MOSFET P-CH 55V 31A IPAK

Infineon Technologies
7,950 -

RFQ

IRFU5305PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPC022N03L3X1SA1

IPC022N03L3X1SA1

MOSFET N-CH 30V 1A SAWN ON FOIL

Infineon Technologies
2,883 -

RFQ

IPC022N03L3X1SA1

Ficha técnica

Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 1A (Tj) 10V 50mOhm @ 2A, 10V 2.2V @ 250µA - - - - - - Surface Mount
IPC302N20NFDX1SA1

IPC302N20NFDX1SA1

MOSFET N-CH 200V 1A SAWN ON FOIL

Infineon Technologies
2,432 -

RFQ

IPC302N20NFDX1SA1

Ficha técnica

Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 1A (Tj) 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - Surface Mount
IPC50R045CPX1SA1

IPC50R045CPX1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,512 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R075CPX1SA1

IPC60R075CPX1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,261 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R099C6X1SA1

IPC60R099C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,772 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R099CPX1SA2

IPC60R099CPX1SA2

MOSFET N-CH BARE DIE

Infineon Technologies
3,078 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R160C6X1SA1

IPC60R160C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,074 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R190E6X1SA1

IPC60R190E6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,134 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R280E6X1SA1

IPC60R280E6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,447 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 303304305306307308309310...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario