Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010NSTRLPBF

IRF1010NSTRLPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
8,080 -

RFQ

IRF1010NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD08N50C3ATMA1

SPD08N50C3ATMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies
1,941 -

RFQ

SPD08N50C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC012N04NM6ATMA1

ISC012N04NM6ATMA1

TRENCH <= 40V PG-TDSON-8

Infineon Technologies
8,387 -

RFQ

ISC012N04NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 232A (Tc) 6V, 10V 1.2mOhm @ 50A, 10V 2.8V @ 747µA 64 nC @ 10 V ±20V 4600 pF @ 20 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3806PBF

IRFB3806PBF

MOSFET N-CH 60V 43A TO220AB

Infineon Technologies
1,890 -

RFQ

IRFB3806PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24NPBF

IRFIZ24NPBF

MOSFET N-CH 55V 14A TO220AB FP

Infineon Technologies
8,601 -

RFQ

IRFIZ24NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 10V 70mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0805LSATMA1

BSC0805LSATMA1

MOSFET N-CH 100V 79A TDSON-8-6

Infineon Technologies
4,062 -

RFQ

BSC0805LSATMA1

Ficha técnica

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 49µA 20 nC @ 4.5 V ±20V 2700 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ010NE2LS5ATMA1

BSZ010NE2LS5ATMA1

MOSFET N-CH 25V 32A/40A TSDSON

Infineon Technologies
6,836 -

RFQ

BSZ010NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 1mOhm @ 20A, 10V 2V @ 250µA 29 nC @ 4.5 V ±16V 3900 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB7546PBF

IRFB7546PBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies
5,222 -

RFQ

IRFB7546PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 6V, 10V 7.3mOhm @ 45A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3000 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS7437TRLPBF

IRFS7437TRLPBF

MOSFET N CH 40V 195A D2PAK

Infineon Technologies
7,201 -

RFQ

IRFS7437TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC60R2K0C6X1SA1

IPC60R2K0C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,834 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R380E6X1SA1

IPC60R380E6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,830 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R385CPX1SA1

IPC60R385CPX1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,649 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R3K3C6X1SA1

IPC60R3K3C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,752 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R520E6X1SA1

IPC60R520E6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,816 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R600E6X1SA1

IPC60R600E6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,822 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC60R950C6X1SA1

IPC60R950C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,661 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC65R037C6X1SA2

IPC65R037C6X1SA2

MOSFET N-CH BARE DIE

Infineon Technologies
3,842 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC65R070C6X1SA1

IPC65R070C6X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,225 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPC90R120C3X1SA1

IPC90R120C3X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,601 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC90R1K0C3X1SA1

IPC90R1K0C3X1SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,329 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 304305306307308309310311...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario