Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF7N50F

FDPF7N50F

MOSFET N-CH 500V 6A TO220F

Fairchild Semiconductor
2,875 -

RFQ

FDPF7N50F

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.15Ohm @ 3A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 960 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF9Z34N-INF

AUIRF9Z34N-INF

AUTOMOTIVE HEXFET P CHANNEL

Infineon Technologies
1,317 -

RFQ

AUIRF9Z34N-INF

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF543

IRF543

N-CHANNEL POWER MOSFET

Harris Corporation
965 -

RFQ

IRF543

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK754R0-55B,127

BUK754R0-55B,127

PFET, 75A I(D), 55V, 0.004OHM, 1

NXP USA Inc.
960 -

RFQ

BUK754R0-55B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 86 nC @ 10 V ±20V 6776 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75631SK8T_NB82083

HUF75631SK8T_NB82083

N CHANNEL ULTRAFET 100V, 33A, 4

Fairchild Semiconductor
651 -

RFQ

HUF75631SK8T_NB82083

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSS10N60B

SSS10N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
470 -

RFQ

SSS10N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tj) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 2700 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2520T1H-T2-AT

UPA2520T1H-T2-AT

MOSFET N-CH 30V 10A 8VSOF

Renesas Electronics America Inc
9,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) - 13.2mOhm @ 10A, 10V 2.5V @ 1mA 10.8 nC @ 5 V - 1100 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

Fairchild Semiconductor
3,682 -

RFQ

FQPF3N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 5V @ 250µA 19 nC @ 10 V ±30V 690 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI13N06LTU

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

Fairchild Semiconductor
2,955 -

RFQ

FQI13N06LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK0657DPA-WS#J5A

RJK0657DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,720 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RF1K49156

RF1K49156

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,660 -

RFQ

RF1K49156

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS240B

IRFS240B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,420 -

RFQ

IRFS240B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF33N10

FQAF33N10

MOSFET N-CH 100V 25.8A TO3PF

Fairchild Semiconductor
1,396 -

RFQ

FQAF33N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25.8A (Tc) 10V 52mOhm @ 12.9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6512A

FDU6512A

MOSFET N-CH 20V 10.7A/36A IPAK

Fairchild Semiconductor
1,151 -

RFQ

FDU6512A

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V 1.5V @ 250µA 19 nC @ 4.5 V ±12V 1082 pF @ 10 V - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD6N60CTM

FQD6N60CTM

MOSFET N-CH 600V 4A DPAK

Fairchild Semiconductor
869 -

RFQ

FQD6N60CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFP9640L

SFP9640L

MOSFET P-CH 200V 11A TO220-3

Fairchild Semiconductor
760 -

RFQ

SFP9640L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 5V 500mOhm @ 5.5A, 5V 2V @ 250µA 59 nC @ 5 V ±20V 1585 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75343P3

HUFA75343P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
643 -

RFQ

HUFA75343P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P4-05AKSA1

IPI80P03P4-05AKSA1

P-CHANNEL POWER MOSFET

Infineon Technologies
8,248 -

RFQ

Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF631

IRF631

N-CHANNEL POWER MOSFET

Harris Corporation
5,221 -

RFQ

IRF631

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6810STRPBF

IRF6810STRPBF

PFET, 16A I(D), 25V, 0.0052OHM

International Rectifier
4,760 -

RFQ

IRF6810STRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 16A, 10V 2.1V @ 25µA 11 nC @ 4.5 V ±16V 1038 pF @ 13 V - 2.1W (Ta), 20W (Tc) -40°C ~ 150°C (TJ)
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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