Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN30N120P

IXFN30N120P

MOSFET N-CH 1200V 30A SOT-227B

IXYS
2,495 -

RFQ

IXFN30N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 350mOhm @ 500mA, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VMO60-05F

VMO60-05F

MOSFET N-CH 500V 60A TO240AA

IXYS
2,096 -

RFQ

VMO60-05F

Ficha técnica

Box HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 75mOhm @ 500mA, 10V 4V @ 24mA 405 nC @ 10 V ±20V 12600 pF @ 25 V - 590W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXFN100N50Q3

IXFN100N50Q3

MOSFET N-CH 500V 82A SOT227B

IXYS
2,997 -

RFQ

IXFN100N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 82A (Tc) 10V 49mOhm @ 50A, 10V 6.5V @ 8mA 255 nC @ 10 V ±30V 13800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN62N80Q3

IXFN62N80Q3

MOSFET N-CH 800V 49A SOT227B

IXYS
2,697 -

RFQ

IXFN62N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 140mOhm @ 31A, 10V 6.5V @ 8mA 270 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN36N100

IXFN36N100

MOSFET N-CH 1KV 36A SOT-227B

IXYS
2,266 -

RFQ

IXFN36N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 36A (Tc) 10V 240mOhm @ 500mA, 10V 5V @ 8mA 380 nC @ 10 V ±20V 9200 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX3N250L

IXTX3N250L

MOSFET N-CH 2500V 3A PLUS247-3

IXYS
2,671 -

RFQ

Tube Linear Active N-Channel MOSFET (Metal Oxide) 2500 V 3A (Tc) 10V 10Ohm @ 1.5A, 10V 5V @ 1mA 230 nC @ 10 V ±20V 5400 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN62N50L

IXTN62N50L

MOSFET N-CH 500V 62A SOT227B

IXYS
3,691 -

RFQ

IXTN62N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 500mA, 20V 5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX6N200P3HV

IXTX6N200P3HV

MOSFET N-CH 2000V 6A TO247PLUSHV

IXYS
2,016 -

RFQ

IXTX6N200P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 6A (Tc) 10V 4Ohm @ 3A, 10V 5V @ 250µA 143 nC @ 10 V ±20V 3700 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK3N250L

IXTK3N250L

MOSFET N-CH 2500V 3A TO264

IXYS
3,458 -

RFQ

Tube Linear Active N-Channel MOSFET (Metal Oxide) 2500 V 3A (Tc) 10V 10Ohm @ 1.5A, 10V 5V @ 1mA 230 nC @ 10 V ±20V 5400 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN32N120P

IXFN32N120P

MOSFET N-CH 1200V 32A SOT-227B

IXYS
3,987 -

RFQ

IXFN32N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 32A (Tc) 10V 310mOhm @ 500mA, 10V 6.5V @ 1mA 360 nC @ 10 V ±30V 21000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTF1R4N450

IXTF1R4N450

MOSFET N-CH 4500V 1.4A I4PAC

IXYS
2,225 -

RFQ

IXTF1R4N450

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA6N120P

IXFA6N120P

MOSFET N-CH 1200V 6A TO263

IXYS
267 -

RFQ

IXFA6N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK180N15P

IXTK180N15P

MOSFET N-CH 150V 180A TO264

IXYS
2,877 -

RFQ

IXTK180N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 180A (Tc) 10V 10mOhm @ 90A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT140P10T

IXTT140P10T

MOSFET P-CH 100V 140A TO268

IXYS
3,644 -

RFQ

IXTT140P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 12mOhm @ 70A, 10V 4V @ 250µA 400 nC @ 10 V ±15V 31400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTN660N04T4

IXTN660N04T4

MOSFET N-CH 40V 660A SOT227B

IXYS
2,459 -

RFQ

IXTN660N04T4

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 660A (Tc) 10V 0.85mOhm @ 100A, 10V 4V @ 250µA 860 nC @ 10 V ±15V 44000 pF @ 25 V Current Sensing 1040W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN60N80P

IXFN60N80P

MOSFET N-CH 800V 53A SOT-227B

IXYS
3,149 -

RFQ

IXFN60N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 53A (Tc) 10V 140mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN150N65X2

IXFN150N65X2

MOSFET N-CH 650V 145A SOT227B

IXYS
3,115 -

RFQ

IXFN150N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 145A (Tc) 10V 17mOhm @ 75A, 10V 5V @ 8mA 355 nC @ 10 V ±30V 21000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN210P10T

IXTN210P10T

MOSFET P-CH 100V 210A SOT227B

IXYS
3,482 -

RFQ

IXTN210P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 210A (Tc) 10V 7.5mOhm @ 105A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 69500 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX4N300P3HV

IXTX4N300P3HV

MOSFET N-CH 3000V 4A TO247PLUSHV

IXYS
2,699 -

RFQ

IXTX4N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 4A (Tc) 10V 12.5Ohm @ 2A, 10V 5V @ 250µA 139 nC @ 10 V ±20V 3680 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
VMO580-02F

VMO580-02F

MOSFET N-CH 200V 580A Y3-LI

IXYS
2,129 -

RFQ

VMO580-02F

Ficha técnica

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.8mOhm @ 430A, 10V 4V @ 50mA 2750 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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