Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

SICFET N-CH 1.2KV 90A TO268AA

IXYS
3,187 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 160 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) Surface Mount
IXFY36N20X3

IXFY36N20X3

MOSFET N-CH 200V 36A TO252AA

IXYS
2,439 -

RFQ

IXFY36N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH6N50D2

IXTH6N50D2

MOSFET N-CH 500V 6A TO247

IXYS
2,595 -

RFQ

IXTH6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH15N100P

IXFH15N100P

MOSFET N-CH 1000V 15A TO247AD

IXYS
3,370 -

RFQ

IXFH15N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH60N60X3

IXFH60N60X3

MOSFET ULTRA JCT 600V 60A TO247

IXYS
3,501 -

RFQ

IXFH60N60X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 51mOhm @ 30A, 10V 5V @ 4mA 51 nC @ 10 V ±20V 3450 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA150N15X4

IXTA150N15X4

MOSFET N-CH 150V 150A TO263AA

IXYS
2,042 -

RFQ

IXTA150N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 6.9mOhm @ 75A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 5500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH78N60X3

IXFH78N60X3

MOSFET ULTRA JCT 600V 78A TO247

IXYS
3,133 -

RFQ

IXFH78N60X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 78A 10V 38mOhm @ 39A, 10V 5V @ 4mA 70 nC @ 10 V ±20V 4700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX64N60P3

IXFX64N60P3

MOSFET N-CH 600V 64A PLUS247-3

IXYS
3,049 -

RFQ

IXFX64N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 5V @ 4mA 145 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK88N30P

IXFK88N30P

MOSFET N-CH 300V 88A TO264AA

IXYS
3,826 -

RFQ

IXFK88N30P

Ficha técnica

Bulk HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N50L2

IXTH30N50L2

MOSFET N-CH 500V 30A TO247

IXYS
3,255 -

RFQ

IXTH30N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 4.5V @ 250µA 240 nC @ 10 V ±20V 8100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH140P10T

IXTH140P10T

MOSFET P-CH 100V 140A TO247

IXYS
3,723 -

RFQ

IXTH140P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 12mOhm @ 70A, 10V 4V @ 250µA 400 nC @ 10 V ±15V 31400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK64N60P

IXFK64N60P

MOSFET N-CH 600V 64A TO264AA

IXYS
2,584 -

RFQ

IXFK64N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX210P10T

IXTX210P10T

MOSFET P-CH 100V 210A PLUS247-3

IXYS
3,308 -

RFQ

IXTX210P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 210A (Tc) 10V 7.5mOhm @ 105A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 69500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN82N60P

IXFN82N60P

MOSFET N-CH 600V 72A SOT-227B

IXYS
3,521 -

RFQ

IXFN82N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 75mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFZ520N075T2

IXFZ520N075T2

MOSFET N-CH 75V 465A DE475

IXYS
2,675 -

RFQ

IXFZ520N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 465A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFN56N90P

IXFN56N90P

MOSFET N-CH 900V 56A SOT-227B

IXYS
2,783 -

RFQ

IXFN56N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 56A (Tc) 10V 135mOhm @ 28A, 10V 6.5V @ 3mA 375 nC @ 10 V ±30V 23000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX5N250

IXTX5N250

MOSFET N-CH 2500V 5A PLUS247-3

IXYS
2,627 -

RFQ

IXTX5N250

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 5A (Tc) 10V 8.8Ohm @ 2.5A, 10V 5V @ 1mA 200 nC @ 10 V ±30V 8560 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP4N65X2

IXTP4N65X2

MOSFET N-CH 650V 4A TO220

IXYS
266 -

RFQ

IXTP4N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1R6N50D2

IXTA1R6N50D2

MOSFET N-CH 500V 1.6A TO263

IXYS
2,486 -

RFQ

IXTA1R6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 2.3Ohm @ 800mA, 0V - 23.7 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP62N15P

IXTP62N15P

MOSFET N-CH 150V 62A TO220AB

IXYS
3,440 -

RFQ

IXTP62N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario