Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXKR40N60C

IXKR40N60C

MOSFET N-CH 600V 38A ISOPLUS247

IXYS
3,389 -

RFQ

IXKR40N60C

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 70mOhm @ 25A, 10V 3.9V @ 3mA 250 nC @ 10 V ±20V - Super Junction - -40°C ~ 150°C (TJ) Through Hole
IXFN120N20

IXFN120N20

MOSFET N-CH 200V 120A SOT-227B

IXYS
3,481 -

RFQ

IXFN120N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 500mA, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFL60N80P

IXFL60N80P

MOSFET N-CH 800V 40A ISOPLUS264

IXYS
3,839 -

RFQ

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 40A (Tc) 10V 150mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK26N100P

IXFK26N100P

MOSFET N-CH 1000V 26A TO264AA

IXYS
3,426 -

RFQ

IXFK26N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR20N120P

IXFR20N120P

MOSFET N-CH 1200V 13A ISOPLUS247

IXYS
3,612 -

RFQ

IXFR20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 13A (Tc) 10V 630mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX26N120P

IXFX26N120P

MOSFET N-CH 1200V 26A PLUS247-3

IXYS
3,003 -

RFQ

IXFX26N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 500mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 16000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB52N90P

IXFB52N90P

MOSFET N-CH 900V 52A PLUS264

IXYS
2,809 -

RFQ

IXFB52N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 52A (Tc) 10V 160mOhm @ 26A, 10V 6.5V @ 1mA 308 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKF40N60SCD1

IXKF40N60SCD1

MOSFET N-CH 600V 41A I4PAC

IXYS
3,034 -

RFQ

IXKF40N60SCD1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 70mOhm @ 25A, 10V 3.9V @ 3mA 250 nC @ 10 V ±20V - Super Junction - -40°C ~ 150°C (TJ) Through Hole
MKE38RK600DFEL-TUB

MKE38RK600DFEL-TUB

MOSFET N-CH 600V 50A SMPD

IXYS
2,873 -

RFQ

MKE38RK600DFEL-TUB

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Surface Mount
IXFR48N60Q3

IXFR48N60Q3

MOSFET N-CH 600V 32A ISOPLUS247

IXYS
3,891 -

RFQ

IXFR48N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 154mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX24N100Q3

IXFX24N100Q3

MOSFET N-CH 1000V 24A PLUS247-3

IXYS
2,504 -

RFQ

IXFX24N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 440mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK20N120P

IXFK20N120P

MOSFET N-CH 1200V 20A TO264AA

IXYS
2,903 -

RFQ

IXFK20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
FMD40-06KC

FMD40-06KC

MOSFET N-CH 600V 38A I4PAC

IXYS
2,225 -

RFQ

FMD40-06KC

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 2.7mA 250 nC @ 10 V ±20V - Super Junction - -55°C ~ 150°C (TJ) Through Hole
FDM47-06KC5

FDM47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS
3,673 -

RFQ

FDM47-06KC5

Ficha técnica

Tube CoolMOS™, HiPerDyn™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
IXFK64N50Q3

IXFK64N50Q3

MOSFET N-CH 500V 64A TO264AA

IXYS
3,410 -

RFQ

IXFK64N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 64A (Tc) 10V 85mOhm @ 32A, 10V 6.5V @ 4mA 145 nC @ 10 V ±30V 6950 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK48N60Q3

IXFK48N60Q3

MOSFET N-CH 600V 48A TO264AA

IXYS
2,891 -

RFQ

IXFK48N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 140mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
FMD47-06KC5

FMD47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS
3,424 -

RFQ

FMD47-06KC5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
IXFL38N100P

IXFL38N100P

MOSFET N-CH 1000V 29A I5PAK

IXYS
2,057 -

RFQ

IXFL38N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 29A (Tc) 10V 230mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN150N10

IXFN150N10

MOSFET N-CH 100V 150A SOT-227

IXYS
2,010 -

RFQ

IXFN150N10

Ficha técnica

Bulk HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTH3N200P3HV

IXTH3N200P3HV

MOSFET N-CH 2000V 3A TO247

IXYS
3,878 -

RFQ

IXTH3N200P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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