Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN320N17T2

IXFN320N17T2

MOSFET N-CH 170V 260A SOT227B

IXYS
2,916 -

RFQ

IXFN320N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 260A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
MMIX1F360N15T2

MMIX1F360N15T2

MOSFET N-CH 150V 235A 24SMPD

IXYS
2,224 -

RFQ

MMIX1F360N15T2

Ficha técnica

Tube GigaMOS™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 235A (Tc) 10V 4.4mOhm @ 100A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTK20N150

IXTK20N150

MOSFET N-CH 1500V 20A TO264

IXYS
3,665 -

RFQ

IXTK20N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 20A (Tc) 10V 1Ohm @ 10A, 10V 4.5V @ 1mA 215 nC @ 10 V ±30V 7800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN210N30P3

IXFN210N30P3

MOSFET N-CH 300V 192A SOT227B

IXYS
3,106 -

RFQ

IXFN210N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 192A (Tc) 10V 14.5mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1F210N30P3

MMIX1F210N30P3

MOSFET N-CH 300V 108A 24SMPD

IXYS
3,349 -

RFQ

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 108A (Tc) - 16mOhm @ 105A, 10V 5V @ 8mA - - 16200 pF @ 25 V - - - Surface Mount
IXFN38N100Q2

IXFN38N100Q2

MOSFET N-CH 1000V 38A SOT-227

IXYS
2,925 -

RFQ

IXFN38N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 250mOhm @ 19A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 7200 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN180N20

IXFN180N20

MOSFET N-CH 200V 180A SOT-227B

IXYS
3,610 -

RFQ

IXFN180N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 8mA 660 nC @ 10 V ±20V 22000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN44N80

IXFN44N80

MOSFET N-CH 800V 44A SOT-227B

IXYS
3,557 -

RFQ

IXFN44N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 165mOhm @ 500mA, 10V 4.5V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN26N100P

IXFN26N100P

MOSFET N-CH 1000V 23A SOT-227B

IXYS
3,617 -

RFQ

IXFN26N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1F132N50P3

MMIX1F132N50P3

MOSFET N-CH 500V 63A 24SMPD

IXYS
3,303 -

RFQ

MMIX1F132N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 43mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN39N90

IXFN39N90

MOSFET N-CH 900V 39A SOT-227B

IXYS
3,097 -

RFQ

IXFN39N90

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 39A (Tc) 10V 220mOhm @ 500mA, 10V 5V @ 8mA 390 nC @ 10 V ±20V 9200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFL32N120P

IXFL32N120P

MOSFET N-CH 1200V 24A I5PAK

IXYS
2,589 -

RFQ

IXFL32N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 10V 340mOhm @ 16A, 10V 6.5V @ 1mA 360 nC @ 10 V ±30V 21000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN26N120P

IXFN26N120P

MOSFET N-CH 1200V 23A SOT-227B

IXYS
3,312 -

RFQ

IXFN26N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 23A (Tc) 10V 460mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14000 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN230N10

IXFN230N10

MOSFET N-CH 100V 230A SOT-227B

IXYS
3,914 -

RFQ

IXFN230N10

Ficha técnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 230A (Tc) 10V 6mOhm @ 500mA, 10V 4V @ 8mA 570 nC @ 10 V ±20V 19000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1F44N100Q3

MMIX1F44N100Q3

MOSFET N-CH 1000V 30A 24SMPD

IXYS
2,729 -

RFQ

MMIX1F44N100Q3

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 245mOhm @ 22A, 10V 6.5V @ 8mA 264 nC @ 10 V ±30V 13600 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTN5N250

IXTN5N250

MOSFET N-CH 2500V 5A SOT227B

IXYS
2,052 -

RFQ

IXTN5N250

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 5A (Tc) 10V 8.8Ohm @ 2.5A, 10V 5V @ 1mA 200 nC @ 10 V ±30V 8560 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTT12N150HV

IXTT12N150HV

MOSFET N-CH 1500V 12A TO268

IXYS
2,223 -

RFQ

IXTT12N150HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V - 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMIX1F40N110P

MMIX1F40N110P

MOSFET N-CH 1100V 24A 24SMPD

IXYS
3,769 -

RFQ

MMIX1F40N110P

Ficha técnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 1100 V 24A (Tc) 10V 290mOhm @ 20A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTB30N100L

IXTB30N100L

MOSFET N-CH 1000V 30A PLUS264

IXYS
2,182 -

RFQ

IXTB30N100L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 500mA, 20V 5V @ 250µA 545 nC @ 20 V ±30V 13200 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTF2N300P3

IXTF2N300P3

MOSFET N-CH 3000V 1.6A I4PAC

IXYS
3,601 -

RFQ

IXTF2N300P3

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 1.6A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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