Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTB62N50L

IXTB62N50L

MOSFET N-CH 500V 62A PLUS264

IXYS
3,588 -

RFQ

IXTB62N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 31A, 20V 5.5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN70N120SK

IXFN70N120SK

SICFET N-CH 1200V 68A SOT227B

IXYS
2,272 -

RFQ

IXFN70N120SK

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 161 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
IXFH12N90

IXFH12N90

MOSFET N-CH 900V 12A TO247AD

IXYS
2,712 -

RFQ

IXFH12N90

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH6N100

IXFH6N100

MOSFET N-CH 1000V 6A TO247AD

IXYS
2,916 -

RFQ

IXFH6N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 2Ohm @ 500mA, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100

IXFH12N100

MOSFET N-CH 1000V 12A TO247AD

IXYS
2,442 -

RFQ

IXFH12N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK110N07

IXFK110N07

MOSFET N-CH 70V 110A TO264AA

IXYS
3,464 -

RFQ

IXFK110N07

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 110A (Tc) 10V 6mOhm @ 55A, 10V 4V @ 8mA 480 nC @ 10 V ±20V 9000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT58N20Q

IXFT58N20Q

MOSFET N-CH 200V 58A TO268

IXYS
3,756 -

RFQ

IXFT58N20Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH67N10

IXTH67N10

MOSFET N-CH 100V 67A TO247

IXYS
3,710 -

RFQ

IXTH67N10

Ficha técnica

Tube MegaMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 25mOhm @ 33.5A, 10V 4V @ 4mA 260 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH75N10

IXTH75N10

MOSFET N-CH 100V 75A TO247

IXYS
2,427 -

RFQ

IXTH75N10

Ficha técnica

Tube MegaMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 20mOhm @ 37.5A, 10V 4V @ 4mA 260 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH50N20

IXTH50N20

MOSFET N-CH 200V 50A TO247

IXYS
3,006 -

RFQ

IXTH50N20

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 45mOhm @ 25A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450

IRFP450

MOSFET N-CH 500V 14A TO247AD

IXYS
3,747 -

RFQ

IRFP450

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH76N07-11

IXFH76N07-11

MOSFET N-CH 70V 76A TO247AD

IXYS
3,718 -

RFQ

IXFH76N07-11

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 76A (Tc) 10V 11mOhm @ 40A, 10V 3.4V @ 4mA 240 nC @ 10 V ±20V 4400 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH76N07-12

IXFH76N07-12

MOSFET N-CH 70V 76A TO247AD

IXYS
3,347 -

RFQ

IXFH76N07-12

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 76A (Tc) 10V 12mOhm @ 40A, 10V 3.4V @ 4mA 240 nC @ 10 V ±20V 4400 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH75N10

IXFH75N10

MOSFET N-CH 100V 75A TO247AD

IXYS
3,583 -

RFQ

IXFH75N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 20mOhm @ 37.5A, 10V 4V @ 4mA 260 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH42N20

IXFH42N20

MOSFET N-CH 200V 42A TO247AD

IXYS
3,874 -

RFQ

IXFH42N20

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 42A (Tc) 10V 60mOhm @ 500mA, 10V 4V @ 4mA 220 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH58N20

IXFH58N20

MOSFET N-CH 200V 58A TO247AD

IXYS
2,621 -

RFQ

IXFH58N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 220 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH35N30

IXFH35N30

MOSFET N-CH 300V 35A TO247AD

IXYS
3,483 -

RFQ

IXFH35N30

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 35A (Tc) 10V 100mOhm @ 500mA, 10V 4V @ 4mA 200 nC @ 10 V ±20V 4800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH40N30

IXFH40N30

MOSFET N-CH 300V 40A TO247AD

IXYS
3,551 -

RFQ

IXFH40N30

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 500mA, 10V 4V @ 4mA 200 nC @ 10 V ±20V 4800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH13N50

IXFH13N50

MOSFET N-CH 500V 13A TO247AD

IXYS
3,308 -

RFQ

IXFH13N50

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 2.5mA 120 nC @ 10 V ±20V 2800 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH21N50

IXFH21N50

MOSFET N-CH 500V 21A TO247AD

IXYS
3,887 -

RFQ

IXFH21N50

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 250mOhm @ 10.5A, 10V 4V @ 4mA 160 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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