Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH10N80P

IXFH10N80P

MOSFET N-CH 800V 10A TO247AD

IXYS
2,104 -

RFQ

IXFH10N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP34N65X2

IXTP34N65X2

MOSFET N-CH 650V 34A TO220AB

IXYS
3,777 -

RFQ

IXTP34N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH220N06T3

IXFH220N06T3

MOSFET N-CH 60V 220A TO247

IXYS
3,612 -

RFQ

IXFH220N06T3

Ficha técnica

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 8500 pF @ 25 V - 440W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH22N50P

IXFH22N50P

MOSFET N-CH 500V 22A TO247AD

IXYS
3,552 -

RFQ

IXFH22N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH76N25T

IXTH76N25T

MOSFET N-CH 250V 76A TO247

IXYS
3,352 -

RFQ

IXTH76N25T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP56N30X3M

IXFP56N30X3M

MOSFET N-CH 300V 56A TO220

IXYS
2,994 -

RFQ

IXFP56N30X3M

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH96N20P

IXTH96N20P

MOSFET N-CH 200V 96A TO247

IXYS
3,458 -

RFQ

IXTH96N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH150N17T2

IXFH150N17T2

MOSFET N-CH 175V 150A TO247AD

IXYS
3,515 -

RFQ

IXFH150N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 175 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4.5V @ 1mA 233 nC @ 10 V ±20V 14600 pF @ 25 V - 880W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ120N20P

IXTQ120N20P

MOSFET N-CH 200V 120A TO3P

IXYS
2,350 -

RFQ

IXTQ120N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 22mOhm @ 500mA, 10V 5V @ 250µA 152 nC @ 10 V ±20V 6000 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ36N50P

IXTQ36N50P

MOSFET N-CH 500V 36A TO3P

IXYS
2,763 -

RFQ

IXTQ36N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 250µA 85 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR36N60P

IXFR36N60P

MOSFET N-CH 600V 20A ISOPLUS247

IXYS
3,401 -

RFQ

IXFR36N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N90P

IXFH24N90P

MOSFET N-CH 900V 24A TO247AD

IXYS
3,746 -

RFQ

IXFH24N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX98N50P3

IXFX98N50P3

MOSFET N-CH 500V 98A PLUS247-3

IXYS
2,817 -

RFQ

IXFX98N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 98A (Tc) 10V 50mOhm @ 500mA, 10V 5V @ 8mA 197 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKH70N60C5

IXKH70N60C5

MOSFET N-CH 600V 70A TO247AD

IXYS
2,964 -

RFQ

IXKH70N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXFK66N85X

IXFK66N85X

MOSFET N-CH 850V 66A TO264

IXYS
3,857 -

RFQ

IXFK66N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 66A (Tc) 10V 65mOhm @ 500mA, 10V 5.5V @ 8mA 230 nC @ 10 V ±30V 8900 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX320N17T2

IXFX320N17T2

MOSFET N-CH 170V 320A PLUS247-3

IXYS
2,791 -

RFQ

IXFX320N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK320N17T2

IXFK320N17T2

MOSFET N-CH 170V 320A TO264AA

IXYS
3,517 -

RFQ

IXFK320N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN64N60P

IXFN64N60P

MOSFET N-CH 600V 50A SOT227B

IXYS
3,228 -

RFQ

IXFN64N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK64N60Q3

IXFK64N60Q3

MOSFET N-CH 600V 64A TO264AA

IXYS
2,073 -

RFQ

IXFK64N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK400N15X3

IXFK400N15X3

MOSFET N-CH 150V 400A TO264

IXYS
3,374 -

RFQ

IXFK400N15X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 3mOhm @ 200A, 10V 4.5V @ 8mA 365 nC @ 10 V ±20V 23700 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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