Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP170PE6327

BSP170PE6327

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
2,961 -

RFQ

BSP170PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 410 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP171PE6327

BSP171PE6327

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
2,739 -

RFQ

BSP171PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 300mOhm @ 1.9A, 10V 2V @ 460µA 20 nC @ 10 V ±20V 460 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP316PE6327

BSP316PE6327

MOSFET P-CH 100V 680MA SOT223-4

Infineon Technologies
2,811 -

RFQ

BSP316PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 680mA (Ta) 4.5V, 10V 1.8Ohm @ 680mA, 10V 2V @ 170µA 6.4 nC @ 10 V ±20V 146 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP317PE6327

BSP317PE6327

MOSFET P-CH 250V 430MA SOT223-4

Infineon Technologies
3,838 -

RFQ

BSP317PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 430mA (Ta) 4.5V, 10V 4Ohm @ 430mA, 10V 2V @ 370µA 15.1 nC @ 10 V ±20V 262 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS192PE6327

BSS192PE6327

MOSFET P-CH 250V 190MA SOT89

Infineon Technologies
2,759 -

RFQ

BSS192PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 190mA (Ta) 2.8V, 10V 12Ohm @ 190mA, 10V 2V @ 130µA 6.1 nC @ 10 V ±20V 104 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS209PW

BSS209PW

MOSFET P-CH 20V 580MA SOT323-3

Infineon Technologies
2,279 -

RFQ

BSS209PW

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 580mA (Ta) 2.5V, 4.5V 550mOhm @ 580mA, 4.5V 1.2V @ 3.5µA 1.38 nC @ 4.5 V ±12V 89.9 pF @ 15 V - 520mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS223PW L6327

BSS223PW L6327

MOSFET P-CH 20V 390MA SOT323-3

Infineon Technologies
3,119 -

RFQ

BSS223PW L6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 390mA (Ta) 2.5V, 4.5V 1.2Ohm @ 390mA, 4.5V 1.2V @ 1.5µA 0.62 nC @ 4.5 V ±12V 56 pF @ 15 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS670S2L

BSS670S2L

MOSFET N-CH 55V 540MA SOT23-3

Infineon Technologies
2,759 -

RFQ

BSS670S2L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 540mA (Ta) 4.5V, 10V 650mOhm @ 270mA, 10V 2V @ 2.7µA 2.26 nC @ 10 V ±20V 75 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS83PE6327

BSS83PE6327

MOSFET P-CH 60V 330MA SOT23-3

Infineon Technologies
2,439 -

RFQ

BSS83PE6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 2Ohm @ 330mA, 10V 2V @ 80µA 3.57 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJS6403_S1_00001

PJS6403_S1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
930 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta) 4.5V, 10V 32mOhm @ 4A, 10V 2.5V @ 250µA 7.8 nC @ 4.5 V ±20V 870 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123IXTSA1

BSS123IXTSA1

SMALL SIGNAL MOSFETS PG-SOT23-3

Infineon Technologies
506 -

RFQ

BSS123IXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 1.8V @ 13µA 0.63 nC @ 10 V ±20V 15 pF @ 50 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
HAT2205C-EL-E

HAT2205C-EL-E

HAT2205C - N-CHANNEL POWER MOSFE

Renesas
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4.5V 50mOhm @ 1.5A, 4.5V 1.2V @ 1mA 6 nC @ 4.5 V ±8V 430 pF @ 10 V - 200mW (Ta) 150°C Surface Mount
FQP4N50

FQP4N50

3.4A, 500V, 2.7OHM, N-CHANNEL MO

Fairchild Semiconductor
2,116 -

RFQ

FQP4N50

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 3.4A (Tc) 10V 2.7Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
TIP42CTU-T

TIP42CTU-T

TRANS BJTS PNP 100V 6A TO220-3 T

onsemi
6,765 -

RFQ

TIP42CTU-T

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PHK12NQ03LT,518

PHK12NQ03LT,518

NEXPERIA PHK12NQ03LT - 11.8A, 30

NXP Semiconductors
6,500 -

RFQ

PHK12NQ03LT,518

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 11.8A (Tj) 4.5V, 10V 10.5mOhm @ 12A, 10V 2V @ 250µA 17.6 nC @ 5 V ±20V 1335 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SFT1443-W

SFT1443-W

MOSFET N-CH 100V 9A IPAK

onsemi
4,900 -

RFQ

SFT1443-W

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta) 4V, 10V 225mOhm @ 3A, 10V 2.6V @ 1mA 9.8 nC @ 10 V ±20V 490 pF @ 20 V - 1W (Ta), 19W (Tc) 150°C (TJ) Through Hole
FDMS8888

FDMS8888

MOSFET N-CH 30V 13.5A/21A 8PQFN

Fairchild Semiconductor
4,585 -

RFQ

FDMS8888

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 21A (Tc) 4.5V, 10V 9.5mOhm @ 13.5A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSO051N03MSGXUMA1

BSO051N03MSGXUMA1

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
2,500 -

RFQ

BSO051N03MSGXUMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PJA3439-AU_R1_000A1

PJA3439-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.
26,095 -

RFQ

PJA3439-AU_R1_000A1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 2.5V, 10V 4Ohm @ 500mA, 10V 2.5V @ 250µA 1.1 nC @ 4.5 V ±20V 51 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK6212-40C,118

BUK6212-40C,118

NEXPERIA BUK6212-40C - 50A, 40V

NXP Semiconductors
5,239 -

RFQ

BUK6212-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) - 11.2mOhm @ 12A, 10V 2.8V @ 1mA 33.9 nC @ 10 V ±16V 1900 pF @ 25 V - 80W -55°C ~ 175°C (TJ)
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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