Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJA3416A_R1_00001

PJA3416A_R1_00001

SOT-23, MOSFET

Panjit International Inc.
480 -

RFQ

PJA3416A_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 5.8A (Ta) 1.8V, 4.5V 24mOhm @ 5.8A, 4.5V 1.2V @ 250µA 10.4 nC @ 4.5 V ±12V 592 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJA3432_R1_00001

PJA3432_R1_00001

SOT-23, MOSFET

Panjit International Inc.
15,411 -

RFQ

PJA3432_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 1.8V, 4.5V 200mOhm @ 1.6A, 4,5V 1.3V @ 250µA 1.5 nC @ 4.5 V ±8V 93 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJA3476_R1_00001

PJA3476_R1_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
429 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 300mA (Ta) 4.5V, 10V 6Ohm @ 300mA, 10V 2.5V @ 250µA 1.8 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMCM6501VPE/S500Z

PMCM6501VPE/S500Z

NEXPERIA PMCM6501VPE - 12V, P-CH

NXP Semiconductors
4,400 -

RFQ

PMCM6501VPE/S500Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMCM6501VNE/S500Z

PMCM6501VNE/S500Z

NEXPERIA PMCM6501VNE - 12V, N-CH

NXP Semiconductors
4,350 -

RFQ

PMCM6501VNE/S500Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPH6603-TL-E

CPH6603-TL-E

P-CHANNEL SILICON MOSFET ULTRAHI

Sanyo
3,018 -

RFQ

CPH6603-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPH6414-TL-E

CPH6414-TL-E

GENERAL-PURPOSE SWITCHING DEVICE

Sanyo
3,000 -

RFQ

CPH6414-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MCH3420-TL-E

MCH3420-TL-E

MCH3420 - N-CHANNEL SILICON MOSF

onsemi
9,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 500mA (Ta) 4V, 10V 1.85mOhm @ 250mA, 10V 2.2V @ 1mA 3.2 nC @ 10 V ±20V 80 pF @ 20 V - 800mW (Ta) 150°C Surface Mount
FDMS0343S

FDMS0343S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
4,477 -

RFQ

FDMS0343S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 49A (Tc) 4.5V, 10V 1.95mOhm @ 28A, 10V 3V @ 1mA 69 nC @ 10 V ±20V 4515 pF @ 13 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFNL210BTA-FP001

IRFNL210BTA-FP001

IRFNL210 - POWER MOSFET, N-CHANN

onsemi
2,000 -

RFQ

IRFNL210BTA-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 1A (Tc) 10V 1.5Ohm @ 500mA, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Through Hole
NTLJS3180PZTBG

NTLJS3180PZTBG

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,000 -

RFQ

NTLJS3180PZTBG

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.5V, 4.5V 38mOhm @ 3A, 4.5V 1V @ 250µA 19.5 nC @ 4.5 V ±8V 1100 pF @ 16 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ646-TL-E

2SJ646-TL-E

2SJ646 - P-CHANNEL SILICON MOSFE

Sanyo
8,400 -

RFQ

2SJ646-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
N0300P-T1B-AT

N0300P-T1B-AT

SIGNAL DEVICE

Renesas Electronics America Inc
3,000 -

RFQ

N0300P-T1B-AT

Ficha técnica

Bulk - Obsolete - - - 4.5A (Tj) - - - - - - - - - -
MMDF4N01HDR2

MMDF4N01HDR2

TRANS MOSFET N-CH 20V 5.2A 8-PIN

Motorola
2,746 -

RFQ

MMDF4N01HDR2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ646-TL-E

2SJ646-TL-E

2SJ646 - P-CHANNEL SILICON MOSFE

Fairchild Semiconductor
2,600 -

RFQ

2SJ646-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HAT1096C-EL-E

HAT1096C-EL-E

HAT1096C - P-CHANNEL POWER MOSFE

Renesas
9,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 293mOhm @ 500µA, 4.5V 1.4V @ 1mA 2 nC @ 4.5 V ±12V 155 pF @ 10 V - 790mW (Ta) 150°C Surface Mount
NTMFS4C13NBT1G

NTMFS4C13NBT1G

NTMFS4C13N - MOSFET SO8FL 30V 38

onsemi
6,286 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 38A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 750mW (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ECH8662-TL-H

ECH8662-TL-H

ECH8662 - MOSFET 2 N-CHANNEL ARR

onsemi
3,000 -

RFQ

ECH8662-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PH2525L,115

PH2525L,115

NEXPERIA PH2525L - 100A, 25V, 0.

NXP Semiconductors
7,200 -

RFQ

PH2525L,115

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 2.5mOhm @ 25A, 10V 2.15V @ 1mA 34.7 nC @ 4.5 V ±20V 4470 pF @ 12 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HAT2203C-EL-E

HAT2203C-EL-E

HAT2203C-EL-E - SILICON N CHANNE

Renesas
9,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 90mOhm @ 1A, 4.5V 1.4V @ 1mA 1.8 nC @ 4.5 V ±12V 165 pF @ 10 V - 830mW (Ta) 150°C Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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