Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PBHV8115TLH215

PBHV8115TLH215

NEXPERIA PBHV8115X - SMALL SIGNA

NXP Semiconductors
4,000 -

RFQ

PBHV8115TLH215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MMBF4091

MMBF4091

MMBF4091 - N-CHANNEL SWITCH

onsemi
3,965 -

RFQ

MMBF4091

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMPB29XNE,115

PMPB29XNE,115

MOSFET N-CH 30V 5A DFN2020MD-6

NXP USA Inc.
8,996 -

RFQ

PMPB29XNE,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V 900mV @ 250µA 18.6 nC @ 4.5 V ±12V 1150 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPW21N50C3FKSA1

SPW21N50C3FKSA1

MOSFET N-CH 560V 21A TO247-3

Infineon Technologies
3,949 -

RFQ

SPW21N50C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15P10P

SPP15P10P

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies
2,073 -

RFQ

SPP15P10P

Ficha técnica

Tube,Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 50 nC @ 10 V ±20V 1180 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80N03S2L-06

SPP80N03S2L-06

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
2,517 -

RFQ

SPP80N03S2L-06

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.2mOhm @ 80A, 10V 2V @ 80µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP100N03S2L-03

SPP100N03S2L-03

MOSFET N-CH 30V 100A TO220-3

Infineon Technologies
2,364 -

RFQ

SPP100N03S2L-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP100N03S2-03

SPP100N03S2-03

MOSFET N-CH 30V 100A TO220-3

Infineon Technologies
400 -

RFQ

SPP100N03S2-03

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU09N03LA G

IPU09N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,270 -

RFQ

IPU09N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.8mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP03N03LA

IPP03N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies
2,257 -

RFQ

IPP03N03LA

Ficha técnica

Tape & Box (TB) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 3mOhm @ 55A, 10V 2V @ 100µA 57 nC @ 5 V ±20V 7027 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU06N03LAGXK

IPU06N03LAGXK

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,476 -

RFQ

IPU06N03LAGXK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU07N03LA

IPU07N03LA

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
3,609 -

RFQ

IPU07N03LA

Ficha técnica

Tube,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU13N03LA G

IPU13N03LA G

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
2,616 -

RFQ

IPU13N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP09N03LA

IPP09N03LA

MOSFET N-CH 25V 50A TO220-3

Infineon Technologies
2,254 -

RFQ

IPP09N03LA

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 9.2mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP14N03LA

IPP14N03LA

MOSFET N-CH 25V 30A TO220-3

Infineon Technologies
3,420 -

RFQ

IPP14N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 13.9mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP05N03LA

IPP05N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies
2,340 -

RFQ

IPP05N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06N03LA

IPP06N03LA

MOSFET N-CH 25V 50A TO220-3

Infineon Technologies
3,440 -

RFQ

IPP06N03LA

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6.2mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA04N50C3XKSA1

SPA04N50C3XKSA1

MOSFET N-CH 560V 4.5A TO220-FP

Infineon Technologies
2,178 -

RFQ

SPA04N50C3XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP04N03LA

IPP04N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies
2,570 -

RFQ

IPP04N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N50C3HKSA1

SPP04N50C3HKSA1

MOSFET N-CH 560V 4.5A TO220-3

Infineon Technologies
2,317 -

RFQ

SPP04N50C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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