Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
5P40

5P40

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

Goford Semiconductor
2,209 -

RFQ

5P40

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 85mOhm @ 5A, 10V 3V @ 250µA 14 nC @ 10 V ±20V 650 pF @ 20 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK7575-55A,127

BUK7575-55A,127

NEXPERIA BUK7575 - N-CHANNEL MO

NXP Semiconductors
9,897 -

RFQ

BUK7575-55A,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA - ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFT1423-TL-E

SFT1423-TL-E

MOSFET N-CH 500V 2A TP-FA

onsemi
3,500 -

RFQ

SFT1423-TL-E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2A (Ta) 4V, 10V 4.9Ohm @ 1A, 10V - 8.7 nC @ 10 V ±20V 175 pF @ 30 V - 1W (Ta), 20W (Tc) 150°C (TJ) Surface Mount
FDD1600N10ALZD

FDD1600N10ALZD

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi
2,400 -

RFQ

FDD1600N10ALZD

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 5V, 10V 160mOhm @ 3.4A, 10V 2.8V @ 250µA 3.61 nC @ 10 V ±20V 225 pF @ 50 V - 14.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9540-100A,127

BUK9540-100A,127

NEXPERIA BUK9540 - N-CHANNEL MOS

NXP Semiconductors
2,063 -

RFQ

BUK9540-100A,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 39mOhm @ 25A, 10V 2V @ 1mA 48 nC @ 5 V ±15V 3072 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
MMSF7N03HDR2

MMSF7N03HDR2

TRANS MOSFET N-CH 30V 8.2A 8-PIN

Motorola
1,666 -

RFQ

MMSF7N03HDR2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PJA3403_R1_00001

PJA3403_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
675 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 2.5V, 10V 98mOhm @ 3.1A, 10V 1.3V @ 250µA 11 nC @ 10 V ±12V 443 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK2109-T1-AZ

2SK2109-T1-AZ

2SK2109-T1-AZ - N-CHANNEL MOS FE

Renesas
6,956 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 4V, 10V 800mOhm @ 300mA, 10V 2V @ 1mA - ±20V 111 pF @ 10 V - 2W (Ta) 150°C Surface Mount
IPD05N03LA G

IPD05N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
3,168 -

RFQ

IPD05N03LA G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.1mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06N03LA G

IPD06N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
3,678 -

RFQ

IPD06N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD09N03LA G

IPD09N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
2,888 -

RFQ

IPD09N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.6mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD13N03LA G

IPD13N03LA G

MOSFET N-CH 25V 30A TO252-3

Infineon Technologies
3,403 -

RFQ

IPD13N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPF05N03LA G

IPF05N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
2,354 -

RFQ

IPF05N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.1mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB04N60C3ATMA1

SPB04N60C3ATMA1

MOSFET N-CH 650V 4.5A TO263-3

Infineon Technologies
2,444 -

RFQ

SPB04N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB02N60C3ATMA1

SPB02N60C3ATMA1

MOSFET N-CH 650V 1.8A TO263-3

Infineon Technologies
36,000 -

RFQ

SPB02N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB03N60C3ATMA1

SPB03N60C3ATMA1

MOSFET N-CH 650V 3.2A TO263-3

Infineon Technologies
2,000 -

RFQ

SPB03N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB07N60C3ATMA1

SPB07N60C3ATMA1

MOSFET N-CH 650V 7.3A TO263-3

Infineon Technologies
3,558 -

RFQ

SPB07N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB100N03S2-03

SPB100N03S2-03

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
2,730 -

RFQ

SPB100N03S2-03

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N03S2L-03

SPB100N03S2L-03

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
2,976 -

RFQ

SPB100N03S2L-03

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB21N10

SPB21N10

MOSFET N-CH 100V 21A TO263-3

Infineon Technologies
2,688 -

RFQ

SPB21N10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 80mOhm @ 15A, 10V 4V @ 44µA 38.4 nC @ 10 V ±20V 865 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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