Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPB35N10

SPB35N10

MOSFET N-CH 100V 35A TO263-3

Infineon Technologies
2,513 -

RFQ

SPB35N10

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 44mOhm @ 26.4A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 1570 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD35N10

SPD35N10

MOSFET N-CH 100V 35A TO252-3

Infineon Technologies
2,500 -

RFQ

SPD35N10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 44mOhm @ 26.4A, 10V - 65 nC @ 10 V ±20V 1570 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB73N03S2L-08

SPB73N03S2L-08

MOSFET N-CH 30V 73A TO263-3

Infineon Technologies
2,961 -

RFQ

SPB73N03S2L-08

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8.1mOhm @ 36A, 10V 2V @ 55µA 46.2 nC @ 10 V ±20V 1710 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L-05

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
75,780 -

RFQ

SPB80N03S2L-05

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L-06

SPB80N03S2L-06

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
3,306 -

RFQ

SPB80N03S2L-06

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.9mOhm @ 80A, 10V 2V @ 80µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD02N50C3

SPD02N50C3

MOSFET N-CH 560V 1.8A TO252-3

Infineon Technologies
67,500 -

RFQ

SPD02N50C3

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 9 nC @ 10 V ±20V 190 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD02N60C3BTMA1

SPD02N60C3BTMA1

MOSFET N-CH 650V 1.8A TO252-3

Infineon Technologies
3,649 -

RFQ

SPD02N60C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD03N50C3BTMA1

SPD03N50C3BTMA1

MOSFET N-CH 560V 3.2A TO252-3

Infineon Technologies
2,324 -

RFQ

SPD03N50C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD03N60C3BTMA1

SPD03N60C3BTMA1

MOSFET N-CH 650V 3.2A DPAK

Infineon Technologies
2,676 -

RFQ

SPD03N60C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD04N50C3BTMA1

SPD04N50C3BTMA1

MOSFET N-CH 560V 4.5A TO252-3

Infineon Technologies
2,406 -

RFQ

SPD04N50C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD04N60C3BTMA1

SPD04N60C3BTMA1

MOSFET N-CH 650V 4.5A TO252-3

Infineon Technologies
2,003 -

RFQ

SPD04N60C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD06N80C3BTMA1

SPD06N80C3BTMA1

MOSFET N-CH 800V 6A TO252-3

Infineon Technologies
2,795 -

RFQ

SPD06N80C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD07N60C3BTMA1

SPD07N60C3BTMA1

MOSFET N-CH 650V 7.3A TO252-3

Infineon Technologies
3,969 -

RFQ

SPD07N60C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD08N50C3BTMA1

SPD08N50C3BTMA1

MOSFET N-CH 560V 7.6A TO252-3

Infineon Technologies
3,457 -

RFQ

SPD08N50C3BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD09P06PL

SPD09P06PL

MOSFET P-CH 60V 9.7A TO252-3

Infineon Technologies
3,380 -

RFQ

SPD09P06PL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V 2V @ 250µA 21 nC @ 10 V ±20V 450 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB20N06T,118

PHB20N06T,118

MOSFET N-CH 55V 20.3A D2PAK

NXP USA Inc.
5,428 -

RFQ

PHB20N06T,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ635-TL-E

2SJ635-TL-E

2SJ635 - P-CHANNEL SILICON MOSFE

onsemi
4,400 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 4V, 10V 60mOhm @ 6A, 10V 2.6V @ 1mA 45 nC @ 10 V ±20V 2200 pF @ 20 V - 1W (Ta), 30W (Tc) 150°C Through Hole
PSMN018-100ESFQ

PSMN018-100ESFQ

NEXPERIA PSMN018 - NEXTPOWER 100

NXP Semiconductors
4,976 -

RFQ

PSMN018-100ESFQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 53A (Ta) 7V, 10V 18mOhm @ 15A, 10V 4V @ 1mA 21.4 nC @ 10 V ±20V 1482 pF @ 50 V - 111W (Ta) -55°C ~ 175°C (TJ) Through Hole
NVD4806NT4G-VF01

NVD4806NT4G-VF01

NVD4806 - SINGLE N-CHANNEL POWER

onsemi
2,500 -

RFQ

NVD4806NT4G-VF01

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 11.5V 2.5V @ 250µA 37 nC @ 11.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB42N03S2L-13

SPB42N03S2L-13

MOSFET N-CH 30V 42A TO263-3

Infineon Technologies
173 -

RFQ

SPB42N03S2L-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 12.6mOhm @ 21A, 10V 2V @ 37µA 30.5 nC @ 10 V ±20V 1130 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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