Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS0312S

FDMS0312S

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,814 -

RFQ

FDMS0312S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4.9mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDG6313N

FDG6313N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,000 -

RFQ

FDG6313N

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN6R0-25YLD115

PSMN6R0-25YLD115

NEXPERIA PSMN6R0-25YLD - POWER F

NXP Semiconductors
9,000 -

RFQ

PSMN6R0-25YLD115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SFU9014TU

SFU9014TU

5.3A, 60V, 0.5OHM, P-CHANNEL MOS

Fairchild Semiconductor
6,260 -

RFQ

SFU9014TU

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ670-TD-E

2SJ670-TD-E

2SJ670 - P-CHANNEL SILICON MOSFE

Sanyo
3,361 -

RFQ

2SJ670-TD-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7225-55A,118

BUK7225-55A,118

N-CHANNEL TRENCHMOS STANDARD LEV

NXP Semiconductors
9,604 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 43A (Ta) 10V 25mOhm @ 25A, 10V 4V @ 1mA - ±20V 1310 pF @ 25 V - 94W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMS0355S

FDMS0355S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
6,000 -

RFQ

FDMS0355S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 22A (Tc) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 1mA 31 nC @ 10 V ±20V 1815 pF @ 15 V - 2.5W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7914TRPBF

IRFH7914TRPBF

IRFH7914 - 12V-300V N-CHANNEL PO

International Rectifier
3,375 -

RFQ

IRFH7914TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 35A (Tc) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1160 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP08N50C3XKSA1

SPP08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-3

Infineon Technologies
2,241 -

RFQ

SPP08N50C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA08N50C3XKSA1

SPA08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-FP

Infineon Technologies
2,823 -

RFQ

SPA08N50C3XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSL207SP

BSL207SP

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies
3,393 -

RFQ

BSL207SP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V 1.2V @ 40µA 20 nC @ 4.5 V ±12V 1007 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL211SP

BSL211SP

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies
2,496 -

RFQ

BSL211SP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 4.5 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL307SP

BSL307SP

MOSFET P-CH 30V 5.5A TSOP-6

Infineon Technologies
2,300 -

RFQ

BSL307SP

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO201SPNTMA1

BSO201SPNTMA1

MOSFET P-CH 20V 14.9A 8DSO

Infineon Technologies
2,011 -

RFQ

BSO201SPNTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 14.9A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 128 nC @ 4.5 V ±12V 5962 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO203SPNTMA1

BSO203SPNTMA1

MOSFET P-CH 20V 9A 8DSO

Infineon Technologies
3,155 -

RFQ

BSO203SPNTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 2.5V, 4.5V 21mOhm @ 9A, 4.5V 1.2V @ 100µA 50.4 nC @ 4.5 V ±12V 2265 pF @ 15 V - 2.35W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO301SPNTMA1

BSO301SPNTMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies
3,742 -

RFQ

BSO301SPNTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 4.5V, 10V 8mOhm @ 14.9A, 10V 2V @ 250µA 136 nC @ 10 V ±20V 5890 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO303SPNTMA1

BSO303SPNTMA1

MOSFET P-CH 30V 8.9A 8DSO

Infineon Technologies
3,246 -

RFQ

BSO303SPNTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 21mOhm @ 8.9A, 10V 2V @ 100µA 69 nC @ 10 V ±20V 1754 pF @ 25 V - 2.35W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO4410

BSO4410

MOSFET N-CH 30V 11.1A 8SO

Infineon Technologies
3,002 -

RFQ

BSO4410

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.1A (Ta) 4.5V, 10V 13mOhm @ 11.1A, 10V 2V @ 42µA 21 nC @ 5 V ±20V 1280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO4420

BSO4420

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,272 -

RFQ

BSO4420

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 7.8mOhm @ 13A, 10V 2V @ 80µA 33.7 nC @ 5 V ±20V 2213 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO4822

BSO4822

MOSFET N-CH 30V 12.7A 8SO

Infineon Technologies
3,356 -

RFQ

BSO4822

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta) 4.5V, 10V 10mOhm @ 12.7A, 10V 2V @ 55µA 26.2 nC @ 5 V ±20V 1640 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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