Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQD7N20LTM

FQD7N20LTM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
4,545 -

RFQ

FQD7N20LTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 5V, 10V 750mOhm @ 2.75A, 10V 2V @ 250µA 9 nC @ 5 V ±20V 500 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ088N03LSG

BSZ088N03LSG

BSZ088N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,871 -

RFQ

BSZ088N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD5N50TM

FDD5N50TM

4A, 500V, 1.4OHM, N-CHANNEL POWE

Fairchild Semiconductor
2,984 -

RFQ

FDD5N50TM

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 1.4Ohm @ 2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDS355N

NDS355N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
1,000 -

RFQ

NDS355N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 245 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
03N06

03N06

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Goford Semiconductor
3,561 -

RFQ

03N06

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A - 100mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 30 V ±20V 510 pF @ 30 V - 1.7W -55°C ~ 150°C (TJ) Surface Mount
PJQ2422_R1_00001

PJQ2422_R1_00001

DFN2020B-6L, MOSFET

Panjit International Inc.
157 -

RFQ

PJQ2422_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 4.3 nC @ 4.5 V ±20V 392 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSV236SP L6327

BSV236SP L6327

MOSFET P-CH 20V 1.5A SOT363-6

Infineon Technologies
3,917 -

RFQ

BSV236SP L6327

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 175mOhm @ 1.5A, 4.5V 1.2V @ 8µA 5.7 nC @ 4.5 V ±12V 228 pF @ 15 V - 560mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
UPA1911ATE(0)-T1-A

UPA1911ATE(0)-T1-A

UPA1911A - FIELD-EFFECT TRANSIST

Renesas
9,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 115mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.3 nC @ 4 V ±12V 370 pF @ 10 V - 200mW (Ta) 150°C Surface Mount
IPB04N03LA

IPB04N03LA

MOSFET N-CH 25V 80A TO263-3

Infineon Technologies
2,266 -

RFQ

IPB04N03LA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 3.9mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN017-30EL,127

PSMN017-30EL,127

PSMN017-30EL - N-CHANNEL 30V LO

NXP Semiconductors
7,475 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta) 4.5V, 10V 17mOhm @ 10A, 10V 2.15V @ 1mA 10.7 nC @ 10 V ±20V 552 pF @ 15 V - 47W (Ta) -55°C ~ 175°C (TJ) Through Hole
IPB05N03LA

IPB05N03LA

MOSFET N-CH 25V 80A TO263-3

Infineon Technologies
4,000 -

RFQ

IPB05N03LA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.6mOhm @ 55A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJS6421_S1_00001

PJS6421_S1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
793 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 1.8V, 4.5V 26mOhm @ 5A, 4.5V 1V @ 250µA 16.5 nC @ 4.5 V ±10V 1620 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB06N03LA

IPB06N03LA

MOSFET N-CH 25V 50A TO263-3

Infineon Technologies
3,582 -

RFQ

IPB06N03LA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS306NH6327XTSA1

BSS306NH6327XTSA1

MOSFET N-CH 30V 2.3A SOT23-3

Infineon Technologies
3,234 -

RFQ

BSS306NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 57mOhm @ 2.3A, 10V 2V @ 11µA 1.5 nC @ 5 V ±20V 275 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB09N03LA

IPB09N03LA

MOSFET N-CH 25V 50A TO263-3

Infineon Technologies
3,111 -

RFQ

IPB09N03LA

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.9mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD4810NT4G

NVD4810NT4G

NVD4810 - SINGLE N-CHANNEL POWER

onsemi
2,500 -

RFQ

NVD4810NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 11 nC @ 4.5 V ±20V 1350 pF @ 12 V - 1.4W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB14N03LA

IPB14N03LA

MOSFET N-CH 25V 30A TO263-3

Infineon Technologies
2,811 -

RFQ

IPB14N03LA

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 13.6mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFT1446-H

SFT1446-H

MOSFET N-CH 60V 20A TP

onsemi
2,000 -

RFQ

SFT1446-H

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 51mOhm @ 10A, 10V 2.6V @ 1mA 16 nC @ 10 V ±20V 750 pF @ 20 V - 1W (Ta), 23W (Tc) 150°C (TJ) Through Hole
IPD04N03LA G

IPD04N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
2,720 -

RFQ

IPD04N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 3.8mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5199 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPF13N03LA G

IPF13N03LA G

MOSFET N-CH 25V 30A TO252-3

Infineon Technologies
630 -

RFQ

IPF13N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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