Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK1591-T2B-A

2SK1591-T2B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,863 -

RFQ

2SK1591-T2B-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP065N03LG

IPP065N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,285 -

RFQ

IPP065N03LG

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFW9530TM

SFW9530TM

MOSFET P-CH 100V 10.5A D2PAK

Fairchild Semiconductor
1,600 -

RFQ

SFW9530TM

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 3.8W (Ta), 66W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUZ73AIN

BUZ73AIN

N-CHANNEL POWER MOSFET

Infineon Technologies
966 -

RFQ

BUZ73AIN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUFA76423D3ST

HUFA76423D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor
8,598 -

RFQ

HUFA76423D3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFP2955

SFP2955

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,794 -

RFQ

SFP2955

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 9.4A (Tc) 10V 300mOhm @ 4.7A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7936TRPBF

IRFH7936TRPBF

IRFH7936 - N-CHANNEL

International Rectifier
5,330 -

RFQ

IRFH7936TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 54A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.35V @ 50µA 26 nC @ 4.5 V ±20V 2360 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD1600N10ALZD

FDD1600N10ALZD

MOSFET N-CH 100V 6.8A TO252-4L

Fairchild Semiconductor
5,000 -

RFQ

FDD1600N10ALZD

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 5V, 10V 160mOhm @ 3.4A, 10V 2.8V @ 250µA 3.61 nC @ 10 V ±20V 225 pF @ 50 V - 14.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC883N03LS G

BSC883N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC883N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SFS9614

SFS9614

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,236 -

RFQ

SFS9614

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 250 V 1.27A (Tc) 10V 4Ohm @ 600mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 13W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTQD4154ZR2G

NTQD4154ZR2G

N-CHANNEL POWER MOSFET

onsemi
4,000 -

RFQ

NTQD4154ZR2G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQD4N50TM

FQD4N50TM

MOSFET N-CH 500V 2.6A DPAK

Fairchild Semiconductor
3,035 -

RFQ

FQD4N50TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF523

IRF523

N-CHANNEL POWER MOSFET

Harris Corporation
2,608 -

RFQ

IRF523

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E13-60E,127

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

NXP USA Inc.
1,470 -

RFQ

BUK7E13-60E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) - 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Ta) -55°C ~ 175°C (TJ) Through Hole
HUF75925D3ST

HUF75925D3ST

MOSFET N-CH 200V 11A TO252AA

Fairchild Semiconductor
1,131 -

RFQ

HUF75925D3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 275mOhm @ 11A, 10V 4V @ 250µA 78 nC @ 20 V ±20V 1030 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP14N06L

RFP14N06L

N-CHANNEL POWER MOSFET

Harris Corporation
1,085 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

International Rectifier
950 -

RFQ

IRF8113GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSP2N60A

SSP2N60A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,000 -

RFQ

SSP2N60A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 410 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N306AD3ST

ISL9N306AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,371 -

RFQ

ISL9N306AD3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQP630

FQP630

MOSFET N-CH 200V 9A TO220-3

Fairchild Semiconductor
5,961 -

RFQ

FQP630

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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