Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HS54095-01-E

HS54095-01-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2762UGR-E1-AT

UPA2762UGR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF5P10

FQPF5P10

MOSFET P-CH 100V 2.9A TO220F

Fairchild Semiconductor
4,443 -

RFQ

FQPF5P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 2.9A (Tc) 10V 1.05Ohm @ 1.45A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK681A-AZ

2SK681A-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,181 -

RFQ

2SK681A-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF5N20L

FQPF5N20L

MOSFET N-CH 200V 3.5A TO220F

Fairchild Semiconductor
3,834 -

RFQ

FQPF5N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 5V, 10V 1.2Ohm @ 1.75A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03M6DNS-WS#J5

RJK03M6DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,610 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MTP4N40E

MTP4N40E

N-CHANNEL POWER MOSFET

onsemi
2,983 -

RFQ

MTP4N40E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF17N08

FQPF17N08

MOSFET N-CH 80V 11.2A TO220F

Fairchild Semiconductor
2,970 -

RFQ

FQPF17N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 11.2A (Tc) 10V 115mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR121

IRFR121

N-CHANNEL POWER MOSFET

Harris Corporation
2,880 -

RFQ

IRFR121

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A - - - - - - - - - Surface Mount
SFS9Z34

SFS9Z34

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,772 -

RFQ

SFS9Z34

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 140mOhm @ 6A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1155 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFW640BTM

IRFW640BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,753 -

RFQ

IRFW640BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 3.13W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFD14N06LSM9A

RFD14N06LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

RFD14N06LSM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03M6DPA-WS#J5A

RJK03M6DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,740 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF2N50

FQPF2N50

MOSFET N-CH 500V 1.3A TO220F

Fairchild Semiconductor
1,628 -

RFQ

FQPF2N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.3A (Tc) 10V 5.3Ohm @ 650mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD112

IRFD112

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,371 -

RFQ

IRFD112

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD2N50TF

FQD2N50TF

MOSFET N-CH 500V 1.6A DPAK

Fairchild Semiconductor
1,015 -

RFQ

FQD2N50TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP065N04NG

IPP065N04NG

N-CHANNEL POWER MOSFET

Infineon Technologies
5,952 -

RFQ

IPP065N04NG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 6.5mOhm @ 50A, 10V 4V @ 200µA 34 nC @ 10 V ±20V 2800 pF @ 20 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD50N03S2L

SPD50N03S2L

N-CHANNEL POWER MOSFET

Infineon Technologies
1,600 -

RFQ

SPD50N03S2L

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ196-T-AZ

2SJ196-T-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
9,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUF75307T3ST

HUF75307T3ST

MOSFET N-CH 55V 2.6A SOT223-4

Fairchild Semiconductor
5,276 -

RFQ

HUF75307T3ST

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.6A (Ta) 10V 90mOhm @ 2.6A, 10V 4V @ 250µA 17 nC @ 20 V ±20V 250 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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