Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB3P20TM

FQB3P20TM

MOSFET P-CH 200V 2.8A D2PAK

Fairchild Semiconductor
3,877 -

RFQ

FQB3P20TM

Ficha técnica

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISL9N310AD3

ISL9N310AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,028 -

RFQ

ISL9N310AD3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQI5P10TU

FQI5P10TU

MOSFET P-CH 100V 4.5A I2PAK

Fairchild Semiconductor
3,000 -

RFQ

FQI5P10TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2P25

FQPF2P25

MOSFET P-CH 250V 1.8A TO220F

Fairchild Semiconductor
2,391 -

RFQ

FQPF2P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 1.8A (Tc) 10V 4Ohm @ 900mA, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP19N10L

FQP19N10L

MOSFET N-CH 100V 19A TO220-3

Fairchild Semiconductor
2,071 -

RFQ

FQP19N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI17N08LTU

FQI17N08LTU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor
2,000 -

RFQ

FQI17N08LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N30TM

FQD5N30TM

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor
1,623 -

RFQ

FQD5N30TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB20N06TM

FQB20N06TM

MOSFET N-CH 60V 20A D2PAK

Fairchild Semiconductor
1,550 -

RFQ

FQB20N06TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 3.75W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB3N40TM

FQB3N40TM

MOSFET N-CH 400V 2.5A D2PAK

Fairchild Semiconductor
1,490 -

RFQ

FQB3N40TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3N50C

FQP3N50C

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,362 -

RFQ

FQP3N50C

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI10N20CTU

FQI10N20CTU

MOSFET N-CH 200V 9.5A I2PAK

Fairchild Semiconductor
1,055 -

RFQ

FQI10N20CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8P10

FQPF8P10

MOSFET P-CH 100V 5.3A TO220F

Fairchild Semiconductor
860 -

RFQ

FQPF8P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.3A (Tc) 10V 530mOhm @ 2.65A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7230-55A,118

BUK7230-55A,118

PFET, 38A I(D), 55V, 0.03OHM, 1-

NXP USA Inc.
6,270 -

RFQ

BUK7230-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 38A (Tc) 10V 30mOhm @ 25A, 10V 4V @ 1mA - ±20V 1152 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK03M9DNS-WS#J5

RJK03M9DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,572 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSF885N03LQ3G

BSF885N03LQ3G

N-CHANNEL POWER MOSFET

Infineon Technologies
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSF083N03LQG

BSF083N03LQG

N-CHANNEL POWER MOSFET

Infineon Technologies
6,000 -

RFQ

BSF083N03LQG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 53A (Tc) 4.5V, 10V 8.3mOhm @ 20A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1800 pF @ 15 V - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC882N03LSG

BSC882N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC882N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC882N03LS G

BSC882N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC882N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ207-AZ

2SJ207-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
2,657 -

RFQ

2SJ207-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB10N10LG

SPB10N10LG

N-CHANNEL POWER MOSFET

Infineon Technologies
993 -

RFQ

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 154mOhm @ 8.1A, 10V 2V @ 21µA 22 nC @ 10 V ±20V 444 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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