Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP230N06L3GXKSA1

IPP230N06L3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
1,500 -

RFQ

IPP230N06L3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF5N30

FQPF5N30

MOSFET N-CH 300V 3.9A TO220F

Fairchild Semiconductor
1,000 -

RFQ

FQPF5N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.9A (Tc) 10V 900mOhm @ 1.95A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD121

IRFD121

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,000 -

RFQ

IRFD121

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 1.3A (Tc) 10V 300mOhm @ 600mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
MCB70N10YB-TP

MCB70N10YB-TP

MOSFET N-CH D2-PAK

Micro Commercial Co
780 -

RFQ

MCB70N10YB-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 8.6mOhm @ 20A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2270 pF @ 50 V - 125W (Tj) -55°C ~ 150°C (TJ) Surface Mount
RJK03M7DPA-00#J5A

RJK03M7DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
9,000 -

RFQ

RJK03M7DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 9.6mOhm @ 15A, 10V - 6.6 nC @ 4.5 V - 1120 pF @ 10 V - 25W (Tc) 150°C (TJ) Surface Mount
FQI5N20TU

FQI5N20TU

MOSFET N-CH 200V 4.5A I2PAK

Fairchild Semiconductor
4,195 -

RFQ

FQI5N20TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 270 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI3N25TU

FQI3N25TU

MOSFET N-CH 250V 2.8A I2PAK

Fairchild Semiconductor
3,648 -

RFQ

FQI3N25TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF7N20

FQPF7N20

MOSFET N-CH 200V 4.8A TO220F

Fairchild Semiconductor
3,159 -

RFQ

FQPF7N20

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 690mOhm @ 2.4A, 10V 5V @ 250µA 10 nC @ 10 V ±30V 400 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
RQJ0603LGDQAWS#H6

RQJ0603LGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics America Inc
2,940 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQI13N06TU

FQI13N06TU

MOSFET N-CH 60V 13A I2PAK

Fairchild Semiconductor
2,534 -

RFQ

FQI13N06TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13A (Tc) 10V 135mOhm @ 6.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF13N06

FQPF13N06

MOSFET N-CH 60V 9.4A TO220F

Fairchild Semiconductor
2,334 -

RFQ

FQPF13N06

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 9.4A (Tc) 10V 135mOhm @ 4.7A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP17N08

FQP17N08

MOSFET N-CH 80V 16.5A TO220-3

Fairchild Semiconductor
2,331 -

RFQ

FQP17N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
SSS4N60BT

SSS4N60BT

TRANS MOSFET N-CH 600V 4A 3PIN(3

Fairchild Semiconductor
1,962 -

RFQ

SSS4N60BT

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tj) 10V 2.5Ohm @ 2A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF7N20L

FQPF7N20L

MOSFET N-CH 200V 5A TO220F

Fairchild Semiconductor
1,711 -

RFQ

FQPF7N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 5V, 10V 750mOhm @ 2.5A, 10V 2V @ 250µA 9 nC @ 5 V ±20V 500 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD3N50CTF

FQD3N50CTF

MOSFET N-CH 500V 2.5A DPAK

Fairchild Semiconductor
1,448 -

RFQ

FQD3N50CTF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.5Ohm @ 1.25A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75321S3ST

HUF75321S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,303 -

RFQ

HUF75321S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD17N08LTF

FQD17N08LTF

MOSFET N-CH 80V 12.9A TO252

Fairchild Semiconductor
1,207 -

RFQ

FQD17N08LTF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 12.9A (Tc) 5V, 10V 100mOhm @ 6.45A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP6N25

FQP6N25

MOSFET N-CH 250V 5.5A TO220-3

Fairchild Semiconductor
1,189 -

RFQ

FQP6N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD4P25TF

FQD4P25TF

MOSFET P-CH 250V 3.1A DPAK

Fairchild Semiconductor
1,000 -

RFQ

FQD4P25TF

Ficha técnica

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 3.1A (Tc) 10V 2.1Ohm @ 1.55A, 10V 5V @ 250µA 14 nC @ 10 V ±30V 420 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH8316TRPBF-IR

IRFH8316TRPBF-IR

IRFH8316 - HEXFET POWER MOSFET

International Rectifier
4,370 -

RFQ

IRFH8316TRPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 50A (Tc) 4.5V, 10V 2.95mOhm @ 20A, 10V 2.2V @ 50µA 59 nC @ 10 V ±20V 3610 pF @ 10 V - 3.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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