Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSO203SP

BSO203SP

P-CHANNEL POWER MOSFET

Infineon Technologies
5,216 -

RFQ

BSO203SP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2350BT1P-E4-A

UPA2350BT1P-E4-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SSR2N60B

SSR2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

SSR2N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA76629D3S

HUFA76629D3S

MOSFET N-CH 100V 20A TO252AA

Fairchild Semiconductor
4,600 -

RFQ

HUFA76629D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFS9Z24

SFS9Z24

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,485 -

RFQ

SFS9Z24

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.5A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N310AP3

ISL9N310AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,211 -

RFQ

ISL9N310AP3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 10Ohm @ 62A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFR1219A

IRFR1219A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

IRFR1219A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR91109A

IRFR91109A

P-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

IRFR91109A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR321

IRFR321

N-CHANNEL POWER MOSFET

Harris Corporation
1,802 -

RFQ

IRFR321

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 3.1A (Ta) 10V 1.8Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF1K49211

RF1K49211

N-CHANNEL POWER MOSFET

Harris Corporation
1,588 -

RFQ

RF1K49211

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 12 V 7A - - - - - - - - - Surface Mount
IRFHM4234TRPBF

IRFHM4234TRPBF

HEXFET POWER MOSFET

International Rectifier
1,122 -

RFQ

IRFHM4234TRPBF

Ficha técnica

Bulk FASTIRFET™, HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 20A (Ta) 4.5V, 10V 4.4mOhm @ 30A, 10V 2.1V @ 25µA 17 nC @ 10 V ±20V 1011 pF @ 13 V - 2.8W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ278MY90TR

2SJ278MY90TR

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SSI7N60BTU

SSI7N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
964 -

RFQ

SSI7N60BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU322

IRFU322

N-CHANNEL POWER MOSFET

Harris Corporation
898 -

RFQ

IRFU322

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Ta) 10V 2.5Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU130ATU

IRFU130ATU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,698 -

RFQ

IRFU130ATU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 110mOhm @ 6.5A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8750

FDD8750

MOSFET N-CH 25V 6.5A/2.7A DPAK

Fairchild Semiconductor
8,245 -

RFQ

FDD8750

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 6.5A (Ta), 2.7A (Tc) 4.5V, 10V 40mOhm @ 2.7A, 10V 2.5V @ 250µA 9 nC @ 10 V ±20V 425 pF @ 13 V - 3.7W (Ta), 18W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD5N30TF

FQD5N30TF

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor
6,905 -

RFQ

FQD5N30TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI11P06TU

FQI11P06TU

MOSFET P-CH 60V 11.4A I2PAK

Fairchild Semiconductor
5,955 -

RFQ

FQI11P06TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7507-30B,127

BUK7507-30B,127

PFET, 75A I(D), 30V, 0.007OHM, 1

NXP USA Inc.
4,611 -

RFQ

BUK7507-30B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 2427 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7516-55A,127

BUK7516-55A,127

PFET, 65.7A I(D), 55V, 0.016OHM

NXP USA Inc.
4,353 -

RFQ

BUK7516-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 65.7A (Tc) 10V 16mOhm @ 25A, 10V 4V @ 1mA - ±20V 2245 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ)
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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