Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SFU9130TU

SFU9130TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,040 -

RFQ

SFU9130TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 9.8A (Tc) 10V 300mOhm @ 4.9A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76107D3ST

HUF76107D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,730 -

RFQ

HUF76107D3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±20V 315 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTD2N40E

MTD2N40E

N-CHANNEL POWER MOSFET

onsemi
3,260 -

RFQ

MTD2N40E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF613

IRF613

N-CHANNEL POWER MOSFET

Harris Corporation
2,940 -

RFQ

IRF613

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU110

IRFU110

4.7A 100V 0.540 OHM N-CHANNEL

Harris Corporation
2,825 -

RFQ

IRFU110

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75307D3ST_NL

HUF75307D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,597 -

RFQ

HUF75307D3ST_NL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SSP1N50B

SSP1N50B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,000 -

RFQ

SSP1N50B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 520 V 1.5A (Tc) 10V 5.3Ohm @ 750mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 340 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N310AD3ST_NL

ISL9N310AD3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,125 -

RFQ

ISL9N310AD3ST_NL

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RFP4N06

RFP4N06

N-CHANNEL POWER MOSFET

Harris Corporation
1,079 -

RFQ

RFP4N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP125L6327

BSP125L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
9,915 -

RFQ

BSP125L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQB9N08TM

FQB9N08TM

MOSFET N-CH 80V 9.3A D2PAK

Fairchild Semiconductor
7,169 -

RFQ

FQB9N08TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V 4V @ 250µA 7.7 nC @ 10 V ±25V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFU9230BTU

SFU9230BTU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,459 -

RFQ

SFU9230BTU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 5.4A (Tc) 10V 800mOhm @ 2.7A, 10V 4V @ 250µA 45 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N20TU

FQI4N20TU

MOSFET N-CH 200V 3.6A I2PAK

Fairchild Semiconductor
5,000 -

RFQ

FQI4N20TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD5N50T4

NTD5N50T4

N-CHANNEL POWER MOSFET

onsemi
5,000 -

RFQ

NTD5N50T4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQD1N60TM

FQD1N60TM

MOSFET N-CH 600V 1A DPAK

Fairchild Semiconductor
4,980 -

RFQ

FQD1N60TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD6N40T4

NTD6N40T4

N-CHANNEL POWER MOSFET

onsemi
4,960 -

RFQ

NTD6N40T4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFD3N08LSM9A

RFD3N08LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,425 -

RFQ

RFD3N08LSM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 3A, 5V 2.5V @ 250µA 8.5 nC @ 10 V ±10V 125 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL620A

IRL620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,890 -

RFQ

IRL620A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 5V 800mOhm @ 2.5A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 430 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP1302

MTP1302

N-CHANNEL POWER MOSFET

onsemi
1,750 -

RFQ

MTP1302

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUFA76619D3ST

HUFA76619D3ST

MOSFET N-CH 100V 18A TO252AA

Fairchild Semiconductor
1,688 -

RFQ

HUFA76619D3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 4.5V, 10V 85mOhm @ 18A, 10V 3V @ 250µA 29 nC @ 10 V ±16V 767 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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