Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU330BTU

IRFU330BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,090 -

RFQ

IRFU330BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMDF7N02ZR2

MMDF7N02ZR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi
3,464 -

RFQ

MMDF7N02ZR2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQP9N08

FQP9N08

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor
3,153 -

RFQ

FQP9N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V 4V @ 250µA 7.7 nC @ 10 V ±25V 250 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
RQK0202RGDQAWS#H6

RQK0202RGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics America Inc
2,980 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP4N25

FQP4N25

MOSFET N-CH 250V 3.6A TO220-3

Fairchild Semiconductor
2,950 -

RFQ

FQP4N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6676AS

FDU6676AS

MOSFET N-CH 30V 90A IPAK

Fairchild Semiconductor
1,708 -

RFQ

FDU6676AS

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Ta) 4.5V, 10V 5.8mOhm @ 16A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 2470 pF @ 15 V - 70W (Ta) -55°C ~ 150°C (TJ) Through Hole
HUF75309D3S

HUF75309D3S

MOSFET N-CH 55V 19A DPAK

Fairchild Semiconductor
1,687 -

RFQ

HUF75309D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) - 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFW720BTM

IRFW720BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,672 -

RFQ

IRFW720BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFP2N10

RFP2N10

N-CHANNEL, MOSFET

Harris Corporation
1,323 -

RFQ

RFP2N10

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD30N03S2L-20G

SPD30N03S2L-20G

N-CHANNEL POWER MOSFET

Infineon Technologies
8,367 -

RFQ

SPD30N03S2L-20G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7528-55A,127

BUK7528-55A,127

PFET, 42A I(D), 55V, 0.028OHM, 1

NXP USA Inc.
4,285 -

RFQ

BUK7528-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 1165 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN050-80BS,118

PSMN050-80BS,118

POWER FIELD-EFFECT TRANSISTOR, 2

NXP USA Inc.
3,200 -

RFQ

PSMN050-80BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Tc) 10V 46mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 633 pF @ 12 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU60R1K4C6

IPU60R1K4C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,370 -

RFQ

IPU60R1K4C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFW530ATM

IRFW530ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,166 -

RFQ

IRFW530ATM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 110mOhm @ 7A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 3.8W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFW9520TM

SFW9520TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,994 -

RFQ

SFW9520TM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 550 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE491

NTE491

MOSFET N-CHANNEL 60V 200MA TO92

NTE Electronics, Inc
944 -

RFQ

NTE491

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
2SK4120LS

2SK4120LS

N-CHANNEL POWER MOSFET

onsemi
1,700 -

RFQ

2SK4120LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFD4N06L

RFD4N06L

N-CHANNEL POWER MOSFET

Harris Corporation
1,424 -

RFQ

RFD4N06L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 5V 600mOhm @ 1A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N7002

2N7002

MOSFET N-CHANNEL 60V 115MA SOT23

NTE Electronics, Inc
652 -

RFQ

2N7002

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP114N03LGHKSA1

IPP114N03LGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,642 -

RFQ

IPP114N03LGHKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 678910111213...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario