Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MSC40SM120JCU3

MSC40SM120JCU3

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology
3,164 -

RFQ

MSC40SM120JCU3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC40SM120JCU2

MSC40SM120JCU2

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology
3,040 -

RFQ

MSC40SM120JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC040SMA120J

MSC040SMA120J

SICFET N-CH 1200V 53A SOT227

Microchip Technology
3,500 -

RFQ

MSC040SMA120J

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 53A (Tc) 20V 50mOhm @ 40A, 20V 2.8V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 208W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
LP0701LG-G

LP0701LG-G

MOSFET P-CH 16.5V 700MA 8SOIC

Microchip Technology
3,379 -

RFQ

LP0701LG-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 16.5 V 700mA (Tj) 2V, 5V 1.5Ohm @ 300mA, 5V 1V @ 1.1mA - ±10V 250 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT18M80B

APT18M80B

MOSFET N-CH 800V 19A TO247

Microchip Technology
3,808 -

RFQ

APT18M80B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 19A (Tc) 10V 530mOhm @ 9A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3760 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC090SMA070S

MSC090SMA070S

SICFET N-CH 700V D3PAK

Microchip Technology
2,086 -

RFQ

MSC090SMA070S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 25A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) Surface Mount
APT18M100B

APT18M100B

MOSFET N-CH 1000V 18A TO247

Microchip Technology
3,283 -

RFQ

APT18M100B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 700mOhm @ 9A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4845 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC180SMA120S

MSC180SMA120S

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology
2,278 -

RFQ

Tube - Active - - - - - - - - - - - - - -
APT77N60BC6

APT77N60BC6

MOSFET N-CH 600V 77A TO247

Microchip Technology
2,349 -

RFQ

APT77N60BC6

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V Super Junction 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT77N60SC6/TR

APT77N60SC6/TR

MOSFET N-CH 600V 77A D3PAK

Microchip Technology
2,383 -

RFQ

APT77N60SC6/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT75M50L

APT75M50L

MOSFET N-CH 500V 75A TO264

Microchip Technology
2,448 -

RFQ

APT75M50L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 75A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010B2FLLG

APT5010B2FLLG

MOSFET N-CH 500V 46A T-MAX

Microchip Technology
2,239 -

RFQ

APT5010B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT31M100L

APT31M100L

MOSFET N-CH 1000V 32A TO264

Microchip Technology
3,601 -

RFQ

APT31M100L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 400mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12060LVRG

APT12060LVRG

MOSFET N-CH 1200V 20A TO264

Microchip Technology
2,744 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 600mOhm @ 10A, 10V 4V @ 2.5mA 650 nC @ 10 V ±30V 9500 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10078BLLG

APT10078BLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology
3,340 -

RFQ

APT10078BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT40N60JCU2

APT40N60JCU2

MOSFET N-CH 600V 40A SOT227

Microchip Technology
3,018 -

RFQ

APT40N60JCU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT51F50J

APT51F50J

MOSFET N-CH 500V 51A ISOTOP

Microchip Technology
2,901 -

RFQ

APT51F50J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10M11JVRU3

APT10M11JVRU3

MOSFET N-CH 100V 142A SOT227

Microchip Technology
2,572 -

RFQ

APT10M11JVRU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT58M80J

APT58M80J

MOSFET N-CH 800V 60A SOT227

Microchip Technology
3,049 -

RFQ

APT58M80J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
LND150N3-G-P014

LND150N3-G-P014

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
3,394 -

RFQ

LND150N3-G-P014

Ficha técnica

Cut Tape (CT),Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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