Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APL1001J

APL1001J

MOSFET N-CH 1000V 18A ISOTOP

Microchip Technology
2,002 -

RFQ

APL1001J

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 600mOhm @ 500mA, 10V 4V @ 2.5mA - ±30V 7200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT1003RKLLG

APT1003RKLLG

MOSFET N-CH 1000V 4A TO220

Microchip Technology
3,259 -

RFQ

APT1003RKLLG

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT4F120K

APT4F120K

MOSFET N-CH 1200V 4A TO220

Microchip Technology
3,307 -

RFQ

APT4F120K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 4A (Tc) 10V 4.6Ohm @ 2A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1385 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT4M120K

APT4M120K

MOSFET N-CH 1200V 5A TO220

Microchip Technology
2,485 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 5A (Tc) 10V 4Ohm @ 2A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1385 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010JFLL

APT5010JFLL

MOSFET N-CH 500V 41A ISOTOP

Microchip Technology
2,505 -

RFQ

APT5010JFLL

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) - 100mOhm @ 20.5A, 10V 5V @ 2.5mA 95 nC @ 10 V - 4360 pF @ 25 V - - - Chassis Mount
APT5018BLLG

APT5018BLLG

MOSFET N-CH 500V 27A TO247

Microchip Technology
3,068 -

RFQ

APT5018BLLG

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V ±30V 2596 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8014JLL

APT8014JLL

MOSFET N-CH 800V 42A ISOTOP

Microchip Technology
2,648 -

RFQ

APT8014JLL

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 42A (Tc) 10V 140mOhm @ 21A, 10V 5V @ 5mA 285 nC @ 10 V ±30V 7238 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8024JLL

APT8024JLL

MOSFET N-CH 800V 29A ISOTOP

Microchip Technology
2,430 -

RFQ

APT8024JLL

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 29A (Tc) 10V 240mOhm @ 14.5A, 10V 5V @ 2.5mA 160 nC @ 10 V ±30V 4670 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
LND250K1-G

LND250K1-G

MOSFET N-CH 500V 13MA SOT23

Microchip Technology
2,367 -

RFQ

LND250K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 13mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94051YM4-TR

MIC94051YM4-TR

MOSFET P-CH 6V 1.8A SOT143

Microchip Technology
2,726 -

RFQ

MIC94051YM4-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SymFET™ Active P-Channel MOSFET (Metal Oxide) 6 V 1.8A (Ta) 1.8V, 4.5V 160mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V 600 pF @ 5.5 V - 568mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
LND150N3-G-P003

LND150N3-G-P003

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
2,432 -

RFQ

LND150N3-G-P003

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
DN1509K1-G

DN1509K1-G

MOSFET N-CH 90V 200MA SOT23-5

Microchip Technology
3,206 -

RFQ

DN1509K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 90 V 200mA (Tj) 0V 6Ohm @ 200mA, 0V - - ±20V 150 pF @ 25 V Depletion Mode 490mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN5325N8-G

TN5325N8-G

MOSFET N-CH 250V 316MA TO243AA

Microchip Technology
2,599 -

RFQ

TN5325N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 316mA (Tj) 4.5V, 10V 7Ohm @ 1A, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 1.6W (Ta) - Surface Mount
DN2450K4-G

DN2450K4-G

MOSFET N-CH 500V 350MA TO252

Microchip Technology
2,356 -

RFQ

DN2450K4-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 350mA (Tj) 0V 10Ohm @ 300mA, 0V - - ±20V 200 pF @ 25 V Depletion Mode 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN2530N8-G

DN2530N8-G

MOSFET N-CH 300V 200MA TO243AA

Microchip Technology
2,368 -

RFQ

DN2530N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 300 V 200mA (Tj) 0V 12Ohm @ 150mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN2450N8-G

DN2450N8-G

MOSFET N-CH 500V 230MA TO243AA

Microchip Technology
2,038 -

RFQ

DN2450N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 230mA (Tj) 0V 10Ohm @ 300mA, 0V - - ±20V 200 pF @ 25 V Depletion Mode 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN3145N8-G

DN3145N8-G

MOSFET N-CH 450V 100MA TO243AA

Microchip Technology
3,683 -

RFQ

DN3145N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 450 V 100mA (Tj) 0V 60Ohm @ 100mA, 0V - - ±20V 120 pF @ 25 V Depletion Mode 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN3535N8-G

DN3535N8-G

MOSFET N-CH 350V 230MA TO243AA

Microchip Technology
2,303 -

RFQ

DN3535N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 350 V 230mA (Tj) 0V 10Ohm @ 150mA, 0V - - ±20V 360 pF @ 25 V Depletion Mode 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN1509N8-G

DN1509N8-G

MOSFET N-CH 90V 360MA TO243AA

Microchip Technology
1,999 -

RFQ

DN1509N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 90 V 360mA (Tj) 0V 6Ohm @ 200mA, 0V - - ±20V 150 pF @ 25 V Depletion Mode 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN2530N3-G

DN2530N3-G

MOSFET N-CH 300V 175MA TO92

Microchip Technology
2,308 -

RFQ

DN2530N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 300 V 175mA (Tj) 0V 12Ohm @ 150mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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