Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT53N60BC6

APT53N60BC6

MOSFET N-CH 600V 53A TO247

Microchip Technology
3,120 -

RFQ

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 154 nC @ 10 V ±20V 4020 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT22F80B

APT22F80B

MOSFET N-CH 800V 23A TO247

Microchip Technology
3,581 -

RFQ

APT22F80B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 23A (Tc) 10V 500mOhm @ 12A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4595 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT17F100B

APT17F100B

MOSFET N-CH 1000V 17A TO247

Microchip Technology
3,685 -

RFQ

APT17F100B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 17A (Tc) 10V 800mOhm @ 9A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4845 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14M120B

APT14M120B

MOSFET N-CH 1200V 14A TO247

Microchip Technology
3,472 -

RFQ

APT14M120B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.2Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC060SMA070B4

MSC060SMA070B4

TRANS SJT N-CH 700V 39A TO247-4

Microchip Technology
3,442 -

RFQ

MSC060SMA070B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT13F120B

APT13F120B

MOSFET N-CH 1200V 14A TO247

Microchip Technology
3,047 -

RFQ

APT13F120B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.4Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT56M50L

APT56M50L

MOSFET N-CH 500V 56A TO264

Microchip Technology
2,876 -

RFQ

APT56M50L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC080SMA120B4

MSC080SMA120B4

SICFET N-CH 1200V 37A TO247-4

Microchip Technology
2,474 -

RFQ

MSC080SMA120B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT30M70BVRG

APT30M70BVRG

MOSFET N-CH 300V 48A TO247

Microchip Technology
2,517 -

RFQ

APT30M70BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 48A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 5870 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC080SMA120S

MSC080SMA120S

SICFET N-CH 1200V 35A D3PAK

Microchip Technology
2,304 -

RFQ

MSC080SMA120S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC035SMA070B

MSC035SMA070B

MOSFET N-CH 700V TO247

Microchip Technology
3,290 -

RFQ

MSC035SMA070B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 77A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 2mA 99 nC @ 20 V +25V, -10V 2010 pF @ 700 V - 283W (Tc) -55°C ~ 175°C (TJ) Through Hole
VN2210N2

VN2210N2

MOSFET N-CH 100V 1.7A TO39

Microchip Technology
2,784 -

RFQ

VN2210N2

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Tj) 5V, 10V 350mOhm @ 4A, 10V 2.4V @ 10mA - ±20V 500 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010LLLG

APT5010LLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology
2,192 -

RFQ

APT5010LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT37M100L

APT37M100L

MOSFET N-CH 1000V 37A TO264

Microchip Technology
3,928 -

RFQ

APT37M100L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT28M120B2

APT28M120B2

MOSFET N-CH 1200V 29A T-MAX

Microchip Technology
2,777 -

RFQ

APT28M120B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 29A (Tc) 10V 560mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT17F120J

APT17F120J

MOSFET N-CH 1200V 18A ISOTOP

Microchip Technology
3,849 -

RFQ

APT17F120J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 580mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JVRU2

APT5010JVRU2

MOSFET N-CH 500V 44A SOT227

Microchip Technology
3,749 -

RFQ

APT5010JVRU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT77N60JC3

APT77N60JC3

MOSFET N-CH 600V 77A ISOTOP

Microchip Technology
3,447 -

RFQ

APT77N60JC3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC025SMA120S

MSC025SMA120S

SICFET N-CH 1.2KV 100A D3PAK

Microchip Technology
428 -

RFQ

MSC025SMA120S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) Surface Mount
APT10045JLL

APT10045JLL

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,575 -

RFQ

APT10045JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V ±30V 4350 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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