Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT100MC120JCU2

APT100MC120JCU2

SICFET N-CH 1200V 143A SOT227

Microchip Technology
3,857 -

RFQ

APT100MC120JCU2

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 143A (Tc) 20V 17mOhm @ 100A, 20V 2.3V @ 2mA 360 nC @ 20 V +25V, -10V 5960 pF @ 1000 V - 600W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
MIC94052YC6-TR

MIC94052YC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology
42,150 -

RFQ

MIC94052YC6-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
TN2504N8-G

TN2504N8-G

MOSFET N-CH 40V 890MA TO243AA

Microchip Technology
32,046 -

RFQ

TN2504N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 890mA (Tj) 5V, 10V 1Ohm @ 1.5A, 10V 1.6V @ 1mA - ±20V 125 pF @ 20 V - 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TN0104N8-G

TN0104N8-G

MOSFET N-CH 40V 630MA TO243AA

Microchip Technology
2,688 -

RFQ

TN0104N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 630mA (Tj) 3V, 10V 2Ohm @ 1A, 10V 1.6V @ 500µA - ±20V 70 pF @ 20 V - 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP2540N8-G

TP2540N8-G

MOSFET P-CH 400V 125MA TO243AA

Microchip Technology
61,915 -

RFQ

TP2540N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 125mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TP2640N3-G

TP2640N3-G

MOSFET P-CH 400V 180MA TO92-3

Microchip Technology
2,629 -

RFQ

TP2640N3-G

Ficha técnica

Bag - Obsolete P-Channel MOSFET (Metal Oxide) 400 V 180mA (Tj) 2.5V, 10V 15Ohm @ 300mA, 10V 2V @ 1mA - ±20V 300 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
TP2424N8-G

TP2424N8-G

MOSFET P-CH 240V 316MA TO243AA

Microchip Technology
2,073 -

RFQ

TP2424N8-G

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 240 V 316mA (Tj) 4.5V, 10V 8Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 200 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
APT14F100B

APT14F100B

MOSFET N-CH 1000V 14A TO247

Microchip Technology
2,407 -

RFQ

APT14F100B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 980mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50MC120JCU2

APT50MC120JCU2

MOSFET N-CH 1200V 71A SOT227

Microchip Technology
2,999 -

RFQ

APT50MC120JCU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 71A (Tc) 20V 34mOhm @ 50A, 20V 2.3V @ 1mA (Typ) 179 nC @ 20 V +25V, -10V 2980 pF @ 1000 V - 300W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
MSC180SMA120B

MSC180SMA120B

MOSFET 1200V 25A TO-247

Microchip Technology
2,442 -

RFQ

Tube - Active - - - - - - - - - - - - - -
APT5020BVRG

APT5020BVRG

MOSFET N-CH 500V 26A TO247

Microchip Technology
2,074 -

RFQ

APT5020BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - 200mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT5020BVFRG

APT5020BVFRG

MOSFET N-CH 500V 26A TO247

Microchip Technology
3,527 -

RFQ

APT5020BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - 200mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT30M85BVRG

APT30M85BVRG

MOSFET N-CH 300V 40A TO247

Microchip Technology
3,940 -

RFQ

APT30M85BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V ±30V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6029BLLG

APT6029BLLG

MOSFET N-CH 600V 21A TO247

Microchip Technology
2,560 -

RFQ

APT6029BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 290mOhm @ 10.5A, 10V 5V @ 1mA 65 nC @ 10 V - 2615 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M38BVRG

APT20M38BVRG

MOSFET N-CH 200V 67A TO247

Microchip Technology
3,364 -

RFQ

APT20M38BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1001RBVRG

APT1001RBVRG

MOSFET N-CH 1000V 11A TO247

Microchip Technology
3,124 -

RFQ

APT1001RBVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) - 1Ohm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3660 pF @ 25 V - - - Through Hole
APT5014BLLG

APT5014BLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology
2,070 -

RFQ

APT5014BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 3261 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010LVRG

APT5010LVRG

MOSFET N-CH 500V 47A TO264

Microchip Technology
2,128 -

RFQ

APT5010LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
MSC040SMA120S/TR

MSC040SMA120S/TR

MOSFET SIC 1200 V 40 MOHM TO-268

Microchip Technology
3,684 -

RFQ

MSC040SMA120S/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT50M75JLLU2

APT50M75JLLU2

MOSFET N-CH 500V 51A SOT227

Microchip Technology
2,644 -

RFQ

APT50M75JLLU2

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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