Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DN3545N3-G

DN3545N3-G

MOSFET N-CH 450V 136MA TO92

Microchip Technology
2,453 -

RFQ

DN3545N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 450 V 136mA (Ta) 0V 20Ohm @ 150mA, 0V - - ±20V 360 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
MIC94030YM4-TR

MIC94030YM4-TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology
3,644 -

RFQ

MIC94030YM4-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TinyFET® Obsolete P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V 1.4V @ 250µA - 16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN2425N8-G

TN2425N8-G

MOSFET N-CH 250V 480MA SOT89-3

Microchip Technology
1,290 -

RFQ

TN2425N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 480mA (Tj) 3V, 10V 3.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±20V 200 pF @ 25 V - 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TN2435N8-G

TN2435N8-G

MOSFET N-CH 350V 365MA TO243AA

Microchip Technology
3,276 -

RFQ

TN2435N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 350 V 365mA (Tj) 3V, 10V 6Ohm @ 750mA, 10V 2.5V @ 1mA - ±20V 200 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN0610N3-G

TN0610N3-G

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology
2,778 -

RFQ

TN0610N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0620N3-G-P002

TN0620N3-G-P002

MOSFET N-CH 200V 250MA TO92-3

Microchip Technology
2,467 -

RFQ

TN0620N3-G-P002

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 250mA (Tj) 5V, 10V 6Ohm @ 500mA, 10V 1.6V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP2435N8-G

TP2435N8-G

MOSFET P-CH 350V 231MA TO243AA

Microchip Technology
2,081 -

RFQ

TP2435N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 350 V 231mA (Tj) 3V, 10V 15Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 200 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN2540N3-G

TN2540N3-G

MOSFET N-CH 400V 175MA TO92-3

Microchip Technology
2,320 -

RFQ

TN2540N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 175mA (Tj) 4.5V, 10V 12Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
VN0300L-G

VN0300L-G

MOSFET N-CH 30V 640MA TO92-3

Microchip Technology
3,036 -

RFQ

VN0300L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 30 V 640mA (Tj) 5V, 10V 1.2Ohm @ 1A, 10V 2.5V @ 1mA - ±30V 190 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2460N3-G

VN2460N3-G

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology
3,685 -

RFQ

VN2460N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP3203N8-G

VP3203N8-G

MOSFET P-CH 30V 1.1A TO243AA

Microchip Technology
3,831 -

RFQ

VP3203N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Tj) 4.5V, 10V 600mOhm @ 1.5A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN0620N3-G

TN0620N3-G

MOSFET N-CH 200V 250MA TO92-3

Microchip Technology
3,155 -

RFQ

TN0620N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 250mA (Tj) 5V, 10V 6Ohm @ 500mA, 10V 1.6V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2406L-G

VN2406L-G

MOSFET N-CH 240V 190MA TO92-3

Microchip Technology
2,158 -

RFQ

VN2406L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 240 V 190mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP0620N3-G

TP0620N3-G

MOSFET P-CH 200V 175MA TO92-3

Microchip Technology
3,143 -

RFQ

TP0620N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 200 V 175mA (Tj) 5V, 10V 12Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
TN2640N3-G

TN2640N3-G

MOSFET N-CH 400V 220MA TO92-3

Microchip Technology
3,033 -

RFQ

TN2640N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 220mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V 2V @ 2mA - ±20V 225 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TP2635N3-G

TP2635N3-G

MOSFET P-CH 350V 180MA TO92-3

Microchip Technology
3,990 -

RFQ

TP2635N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 350 V 180mA (Tj) 2.5V, 10V 15Ohm @ 300mA, 10V 2V @ 1mA - ±20V 300 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
VN2224N3-G

VN2224N3-G

MOSFET N-CH 240V 540MA TO92-3

Microchip Technology
3,873 -

RFQ

VN2224N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 240 V 540mA (Tj) 5V, 10V 1.25Ohm @ 2A, 10V 3V @ 5mA - ±20V 350 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT11N80BC3G

APT11N80BC3G

MOSFET N-CH 800V 11A TO247

Microchip Technology
3,140 -

RFQ

APT11N80BC3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 60 nC @ 10 V ±20V 1585 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT38N60BC6

APT38N60BC6

MOSFET N-CH 600V 38A TO247

Microchip Technology
3,403 -

RFQ

APT38N60BC6

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 112 nC @ 10 V ±20V 2826 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F120S

APT7F120S

MOSFET N-CH 1200V 7A D3PAK

Microchip Technology
2,344 -

RFQ

APT7F120S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.4Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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